KSC3569

KSC3569 KSC3569 High Speed Switching Application • Low Collector Saturation Voltage • Specified of Reverse Biased SOA With Inductive Loads 1 TO-220F 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature 1.Base Value 500 400 7 2 4 1 15 150 - 55 ~ 150 Units V V V A A A W °C °C * PW≤350µs, Duty Cycle≤10% Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) VCEX(sus)1 VCEX(sus)2 ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition IC = 0.5A, IB1 = 0.1A, L = 1mH IC = 0.5A, IB1 = -IB2 = 0.1A Ta= 125°C, L = 180µH, Clamped IC = 1A, IB1 = -IB2 = 0.2A, Ta= 125°C, L = 180µH, Clamped VCB = 400V, IE = 0 VCE = 400V, RBE = 51Ω @ TC = 125°C VCE = 400V, VBE (off) = -5V VCE = 400V, VBE (off) = -5V @ TC= 125°C VBE = 5V, IC = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.5A IC = 0.5A, IB = 0.1A IC = 0.5A, IB = 0.1A VCC = 150V, IC = 0.5A IB1 = -IB2 = 0.1A RL = 300Ω 20 10 Min. 400 450 400 10 1 10 1 10 80 1 1.2 1 2.5 1 V V µs µs µs Max. Units V V V µA mA µA mA µA * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classification Classification hFE1 ©2000 Fairchild Semiconductor International R 20 ~ 40 O 30 ~ 60 Y 40 ~ 80 Rev. A, February 2000 KSC3569 Typical Characteristics 1.0 1000 IB = 90mA IB = 80mA IB = 70mA IB = 60mA VCE = 5V IC[A], COLLECTOR CURRENT 0.8 IB A = 100m hFE, DC CURRENT GAIN 100 0.6 IB = 40mA 0.4 IB = 50mA IB = 30mA IB = 20mA IB = 10mA 0.2 10 0.0 0 1 2 3 4 5 1 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 10 IC = 5 I B IC = 5 IB1 = -5 IB2 1 tON, tSTG, tF [µs], TIME tSTG 1 V BE(sat) tF tON 0.1 0.1 V CE(sat) 0.01 1 10 100 1000 0.01 10 100 1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Switching Time 10000 1.0 IC[mA], COLLECTOR CURRENT 1000 Di ss i pa tio 1m nL im ite d s m 10 s b S/ s IC[A], COLLECTOR CURRENT 10 0µ 10 µs 0.8 0.6 0.4 ite m Li 100 VCEO(sus) 0 100 200 300 400 0.2 10 1 10 100 1000 0.0 500 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area Figure 6. Reverse Bias Safe Operating Area ©2000 Fairchild Semiconductor International Rev. A, February 2000 VCEX(sus) d KSC3569 Typical Characteristics (Continued) 160 20.0 140 17.5 120 PC[W], POWER DISSIPATION 125 150 175 15.0 dT[%], IC DERATING 100 12.5 80 10.0 S/b 60 Di ss Lim ited ipa 7.5 tio n 40 Lim ite 5.0 d 20 2.5 0 0 25 50 o 0.0 75 100 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE TC[ C], CASE TEMPERATURE Figure 7. Derating Curve of Safe Operating Area Figure 8. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC3569 Package Demensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 ) 0° 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 15.87 ±0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ DISCLAIMER HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2000 Fairchild Semiconductor International Rev. E