KSC388

KSC388 KSC388 TV Final Picture IF Amplifier Applications • GPE= 33dB (TYP) at f=45MHz • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 25 4 50 300 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO IEBO hFE VCE (sat) VBE (sat) Cob Cc·rbb´ fT GPE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Collector-Base Time Constant Current Gain Bandwidth Product Power Gain Test Condition IC=10µA, IE=0 IC=5mA, IB=0 VCB=30V, IE=0 VEB=3V, IC=0 VCE=12.5V, IC=12.5mA IC=15mA, IB=1.5mA IC=15mA, IB=1.5mA VCB=10V, IE=0, f=1MHz VCB=10V, IC=1mA f=30MHz VCE=12.5V, IC=12.5mA VCC=12.5V, IC=12.5mA f=45MHz 300 28 33 36 0.8 20 Min. 30 25 0.1 0.1 200 0.2 1.5 2 25 V V pF ps MHz dB Typ. Max. Units V V µA µA ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC388 Typical Characteristics 16 1000 VCE=12.5V IC[mA], COLLECTOR CURRENT 14 IB = 70µA 10 IB = 50µA IB = 40µA IB = 30µA IB = 20µA IB = 10µA 8 hFE, DC CURRENT GAIN 12 IB = 60µA 100 6 4 2 0 0 4 8 12 16 20 24 10 0.1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 1000 IC =10IB VCE=6V IC[mA], COLLECTOR CURRENT 100 1 10 0.1 1 0.01 0.1 1 10 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 10 1000 f = 1MHz IE=0 VCE =12.5V Cib[pF],Cob[pF], CAPACITANCE Cib Cob 1 100 0.1 0.1 1 10 100 10 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Collector Input Capacitance Collector Output Capacitance Figure 6. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC388 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1