KSC5026M

KSC5026M KSC5026M High Voltage and High Reliability • High Speed Switching • Wide SOA 1 TO-126 2.Collector 3.Base 1. Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1100 800 7 1.5 5 0.8 20 150 - 55 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO VCEX(sus) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 0.75A IB1 = -IB2 = 0.15A L = 5mH, Clamped VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.5A IC = 0.75A, IB = 0.15A IC = 0.75A, IB = 0.15A VCB =10V, IE = 0, f = 1MHz VCE = 10V, IC = 0.1A VCC = 400V IC = 5IB1 = -2.5IB2 = 1A RL = 400Ω 35 15 0.5 3 0.3 10 8 Min. 1100 800 7 800 10 10 40 2 1.5 V V pF MHz µs µs µs Typ. Max. Units V V V V µA µA ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT tON tSTG tF Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time hFE Classification Classification hFE1 N 10 ~ 20 R 15 ~ 30 O 20 ~ 40 ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 KSC5026M Typical Characteristics 2.0 1.8 1000 VCE = 5V IC[A], COLLECTOR CURRENT 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 hFE, DC CURRENT GAIN 10 100 IB = 120mA IB = 100mA IB = 80mA IB = 60mA IB = 40mA IB = 20mA IB = 10mA IB = 5mA IB = 0 8 9 10 1 0.01 0.1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 1.6 IC = 5 IB 1.4 VCE = 5V IC[A], COLLECTOR CURRENT 1.2 1 VBE(sat) 1.0 0.8 0.1 VCE(sat) 0.6 0.4 0.2 0.01 0.01 0.1 1 10 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 10 IC(max).(Pulse) s 1m 0µ 10 IC[A], COLLECTOR CURRENT s tON, tSTG, tF [µs], TIME tSTG 1 1 IC(max) DC ms 10 tON tF 0.1 0.1 0.01 0.01 0.1 1E-3 1 10 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe Operating Area ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 KSC5026M Typical Characteristics (Continued) 100 30 IB2 = -0.15A IC[A], COLLECTOR CURRENT 10 PC[W], POWER DISSIPATION 20 1 10 0.1 0.01 10 100 1000 10000 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 KSC5026M Package Dimensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20 (1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 ±0.30 (0.50) 1.75 ±0.20 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 13.06 16.10 ±0.20 0.50 –0.05 +0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1