KSC5030

KSC5030 KSC5030 High Voltage and High Reliabilty • High Speed Switching • Wide SOA 1 TO-3P 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1100 800 7 6 20 3 100 150 - 55 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO VCEX(sus) ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 3A, IB1 = -IB2 = 0.6A L = 1mH, Clamped VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.4A VCE = 5V, IC = 2A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 0.4A VCC = 400V IC = 51B1 = -2.5IB2 = 4A RL = 100Ω 120 15 0.5 3 0.3 10 8 Min. 1100 800 7 800 10 10 40 2 1.5 V V pF MHz µs µs µs Typ. Max. Units V V V V µA µA hFE Classificntion Classification hFE1 N 10 ~ 20 R 15 ~ 30 O 20 ~ 40 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5030 Typical Characteristics 10 9 1000 VCE = 5V IC[A], COLLECTOR CURRENT 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 hFE, DC CURRENT GAIN 100 IB = 800mA IB = 700mA IB = 600mA IB = 500mA IB = 400mA IB = 300mA IB = 200mA IB = 150mA IB = 100mA IB = 50mA IB = 20mA IB = 0 7 8 9 10 10 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 10 IC = 5 I B 9 VCE = 5V IC[A], COLLECTOR CURRENT 1 10 8 7 6 5 4 3 2 1 1 V BE(sat) 0.1 V CE(sat) 0.01 0.01 0.1 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 100 tSTG IC(max).(Pulse) IC[A], COLLECTOR CURRENT 10 tON, tSTG, tF [µs], TIME 10 IC(max) DC 0µ m 10 s s 1m 1 s tON 1 tF 0.1 0.1 0.01 0.1 0.01 1 10 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe Operating Area ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5030 Typical Characteristics (Continued) 100 140 L=200uH IB2 = -0.6A 120 IC[A], COLLECTOR CURRENT 10 PC[W], POWER DISSIPATION 100 80 1 60 0.1 40 20 0.01 10 100 1000 10000 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSC5030 Package Demensions TO-3P 15.60 ±0.20 3.80 ±0.20 13.60 ±0.20 ø3.20 ±0.10 9.60 ±0.20 4.80 ±0.20 1.50 –0.05 +0.15 12.76 ±0.20 19.90 ±0.20 16.50 ±0.30 3.00 ±0.20 1.00 ±0.20 3.50 ±0.20 2.00 ±0.20 13.90 ±0.20 23.40 ±0.20 18.70 ±0.20 1.40 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 +0.15 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H3