KSC5042M

KSC5042M KSC5042M High Voltage Switchihg Dynamic Focus Application • • • • High Collector-Emitter Breakdown Voltage : BVCEO=900V Small Cob =2.8pF (Typ.) Wide S.O.A High reliability 1 TO-126 2.Collector 3.Base 1. Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 1500 900 5 100 300 4 150 - 55 ~ 150 Units V V V mA mA W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 VCB = 900V, IE = 0 VEB = 4V, IC = 0 VCE = 5V, IC = 10mA IC = 20mA, IB = 4mA IC = 20mA, IB = 4mA VCB = 100V, f = 1MHz 2.8 30 5 2 V V pF Min. 1500 900 5 10 10 Typ. Max. Units V V V µA µA ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 KSC5042M Typical Characteristics 100 IB = 10mA 90 9mA 8mA IC[A], COLLECTOR CURRENT 7mA 6mA 5mA 100 VCE = 5V 80 70 60 3mA 2mA 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 IB = 1mA hFE, DC CURRENT GAIN 4mA 10 1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 IC = 5 IB f = 1MHz 1 VBE(sat) IC[A], COLLECTOR CURRENT 10 0.1 VCE(sat) 1 0.01 1 10 100 0.1 1 10 100 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector-Base Capacitance 8 IC(Pulse) 0µ 10 s 0µ 20 IC[mA], COLLECTOR CURRENT 100 ICMAX PC[W], POWER DISSIPATION 6 s s 0µ 50 s 1m ms 10 D.C 4 TC = 25 C O 10 Ta = 25 C 2 O 1 10 100 1000 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 KSC5042M Package Dimensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20 (1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 ±0.30 (0.50) 1.75 ±0.20 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 13.06 16.10 ±0.20 0.50 –0.05 +0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1