KSC5302DI

KSC5302DI KSC5302DI High Voltage & High Speed Power Switch Application • Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half-bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time spread even though corner spirit • Low base drive requirement B Equivalent Circuit C 1 E I-PAK 1. Base 2. Collector 3. Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25°C) Junction Temperature Storage Temperature Value 800 400 12 2 5 1 2 25 150 - 55 ~ 150 Units V V V A A A A W °C °C Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Rθja Thermal Resistance Characteristics Junction to Case Junction to Ambient Rating 5.0 83.3 Unit °C/W ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5302DI Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob tON tSTG tF tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Turn On Time Storage Time Fall Time Storage Time Fall Time Test Condition IC=1mA, IE=0 IC=5mA, IB=0 IE=1mA, IC=0 VCB=500V, IE=0 VEB = 9V, IC = 0 VCE=1V, IC=0.4A VCE=1V,IC=1A IC=0.4A, IB=0.04A IC=1A, IB=0.2A IC=0.4A, IB=0.04A IC=1A, IB=0.2A VCB = 10V, f=1MHz VCC=300V, IC =1A IB1 = 0.2A, IB2=-0.5A RL = 300Ω VCC=15V,VZ=300V IC = 0.8A,IB1 = 0.16A IB2 = -0.16A LC=200µH IF = 0.4A IF = 1A IF = 0.2A IF = 0.4A IF = 1A Min. 800 400 12 20 10 Typ. Max. 10 10 0.4 0.5 0.9 1.0 75 150 2 0.2 2.35 150 V V V V pF ns µs µs µs ns Units V V V µA µA VF trr Diode Forward Voltage * Reverse Recovery Time (di/dt = 10A/µs) - 800 1.0 1.4 1.2 1.5 - V V ns µs µs *Pulse Test : Pulse Width=5, Duty cycles ≤ 10% ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5302DI Typical Characteristics 3.0 100 Ta = 125 C o VCE = 5V IC[A], COLLECTOR CURRENT 2.5 2.0 1.5 hFE, DC CURRENT GAIN IB = 200mA IB = 180mA IB = 160mA IB = 140mA IB = 120mA IB = 100mA IB = 80mA IB = 60mA IB = 40mA 25 C o -25 C o 10 1.0 0.5 IB = 0 0.0 0 1 2 3 4 5 6 7 8 9 10 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 100 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 Ta = 125 C 25 C o -20 C o o VCE = 1V IC = 10 IB hFE, DC CURRENT GAIN 1 VBE(sat) 10 VCE(sat) 0.1 1 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 10 10 IC = 5IB IC = 5IB VCE(sat)[V], SATURATION VOLTAGE 25 C 1 o VBE(sat), SATURATION VOLTAGE Ta = 125 C 0.1 o 1 -20 C 25 C Ta = 125 C o o o -20 C o 0.01 0.01 0.1 1 10 0.1 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 5. Collector-Emitter Saturation Voltage Figure 6. Base-Emitter Saturation Voltage ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5302DI Typical Characteristics (Continued) 10 1.6 trr[µs], REVERSE RECOVERY TIME VCC = 300V IC = 5IB1 = -2.5IB2 tSTG di/dt = 10A/µs 1.4 tSTG, tF [µs], TIME 1 1.2 tF 0.1 1.0 0.8 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1.0 IC[A], COLLECTOR CURRENT If[A], FORWARD CURRENT Figure 7. Switching Time Figure 8. Forward Diode Voltage 10 1000 Vf [V], FORWARD DIODE VOLTAGE f = 1MHz Cob[pF], CAPACITANCE 0.1 1 10 100 1 10 0.1 0.01 1 1 10 100 IF[A], FORWARD DIODE CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 9. Reverse Recovery Time Figure 10. Collector Output Capacitance 100 40 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 1000 10 30 DC 1 5ms 1ms 10µs 1µs 20 0.1 10 0.01 10 0 100 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 11. Safe Operating Area Figure 12. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5302DI Package Dimensions I-PAK 6.60 ±0.20 5.34 ±0.20 (0.50) (4.34) (0.50) 0.50 ±0.10 2.30 ±0.20 ±0.20 ±0.20 0.60 0.70 ±0.10 6.10 ±0.20 0.80 ±0.20 1.80 MAX0.96 0.76 ±0.10 9.30 ±0.30 2.30TYP [2.30±0.20] 2.30TYP [2.30±0.20] 0.50 ±0.10 ©2002 Fairchild Semiconductor Corporation 16.10 ±0.30 Dimensions in Millimeters Rev. B1, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1