KSC5367F

KSC5367F KSC5367F High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area • High Collector-Base Voltage 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Curren (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25°C) Junction Temperature Storage Temperature Value 1600 800 12 3 6 2 4 40 150 - 65 ~ 150 Units V V V A A A A W °C °C * Pulse Test: Pulse Width=5ms, Duty Cycle≤10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Rθja Thermal Resistance Characteristics Junction to Case Junction to Ambient Rating 3.1 62.5 Unit °C/W ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5367F Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC = 0.5mA, IE = 0 IC = 5mA, IB = 0 IC =0.5mA, IC = 0 VCB = 1,600V, IE = 0 VEB = 12V, IC = 0 VCE = 3V, IC = 0.4A VCE = 10V, IC = 5mA IC = 250mA, IB = 25mA IC = 500mA, IB = 50mA IC = 1A, IB = 0.2A IC = 500mA, IB = 50mA VCB =10V, IE = 0, f = 1MHz VCC = 125V, IC = 0.5A IB1 = 42mA, IB2 = -333mA RL = 250Ω VCC = 250V, IC = 1A IB1 = 0.2A, IB2 = -0.4A RL = 250Ω Min. 1600 800 12 12 8 Typ. 40 Max. 20 20 35 2.5 4.0 2.5 1.5 0.5 2.2 0.5 0.5 4.0 0.5 V V V V pF µs µs µs µs µs µs Units V V V µA µA VBE(sat) Cob tON tSTG tF tON tSTG tF Base-Emitter Saturation Voltage Output Capacitance Turn On Time Storage Time Falling Time Turn On Time Storage Time Falling Time ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5367F Typical Characteristics 5 100 VCE = 5V VCE = 3V IC[A], COLLECTOR CURRENT 4 hFE, DC CURRENT GAIN 10 3 IB = 1.4A IB = 1.2A IB = 1A IB = 0.8A IB = 0.6A IB = 0.4A 10 2 IB = 0.2A 1 1 0 0 2 4 6 8 0.1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC = 10IB VCC=250V IC=5IB1=-2.5IB1 tSTG 1 tON[µs], tSTG[µs], tF[µs], TIME VBE(sat) 1 tF tON 0.1 VCE(sat) 0.1 0.01 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Switching Time 10 IC[A], COLLECTOR CURRENT tON[µs], tSTG[µs], tF[µs], TIME VCC=125V IC=0.5A 1IB1=42mA tSTG 1 10 PULSE DC 1ms 100µs 1 5ms tON tF 0.1 0.1 0.01 0.01 0.01 1E-3 0.1 1 10 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe Operating Area ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5367F Typical Characteristics (Continued) 10 60 IB2=200mA L=200µH IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 50 1 40 30 0.1 20 10 0.01 100 0 1000 10000 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSC5367F Package Dimensions TO-220F 3.30 ±0.10 10.16 ±0.20 (7.00) ø3.18 ±0.10 2.54 ±0.20 (0.70) 6.68 ±0.20 15.80 ±0.20 (1.00x45°) MAX1.47 9.75 ±0.30 0.80 ±0.10 (3 0° ) 0.35 ±0.10 2.54TYP [2.54 ±0.20] #1 0.50 –0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20 +0.10 2.76 ±0.20 9.40 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 15.87 ±0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1