KSC5502DT

KSC5502D/KSC5502DT KSC5502D/KSC5502DT High Voltage Power Switch Switching Application • • • • • Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time Two Package Choices : D-PAK or TO-220 B D-PAK Equivalent Circuit C 1 TO-220 E 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO V CEO VEBO IC ICP IB IBP PC TJ TSTG EAS Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Avalanche Energy(Tj=25°C) Value 1200 600 12 2 4 1 2 50 150 - 65 ~ 150 2.5 Units V V V A A A A W °C °C mJ * Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Rθja TL Thermal Resistance Characteristics Junction to Case Junction to Ambient Maximun Lead Temperature for Soldering Purpose : 1/8” from Case for 5 seconds Rating 2.5 62.5 270 °C Unit °C/W ©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001 KSC5502D/KSC5502DT Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICES ICEO IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC=1mA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VCES=1200V, VBE=0 VCE=600V, IB=0 VEB=12V, IC=0 VCE=1V, IC=0.2A VCE=1V, IC=1A VCE=2.5V, IC=0.5A VCE(sat) Collector-Emitter Saturation Voltage IC=0.2A, IB=0.02A IC=0.4A, IB=0.08A IC=1A, IB=0.2A VBE(sat) Base-Emitter Saturation Voltage IC=0.4A, IB=0.08A IC=1A, IB=0.2A Cib Cob fT VF Input Capacitance Output Capacitance Current Gain Bandwidth Product Diode Forward Voltage TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C VEB=8V, IC=0, f=1MHz VCB=10V, IE=0, f=1MHz IC=0.5A,VCE=10V IF=0.2A IF=0.4A IF=1A TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C 15 8 4 3 12 6 28 18 6.4 4.7 20 12 0.31 0.54 0.15 0.23 0.40 1.3 0.77 0.60 0.83 0.70 385 60 11 0.75 0.59 0.80 0.64 0.9 1.5 1.3 1.2 0.8 1.1 0.6 1.0 1.5 3.0 1.0 0.9 1.2 1.0 500 100 V V V V V V V V V V pF pF MHz V V V V V 30 Min. 1200 600 12 Typ. 1350 750 13.7 100 500 100 500 10 40 µA µA Max. Units V V V µA ©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001 KSC5502D/KSC5502DT Electrical Characteristics TC=25°C unless otherwise noted Symbol tfr Parameter Diode Froward Recvery Time (di/dt=10A/µs) Dynamic Saturation Voltage Test Condition IF=0.2A IF=0.4A IF=1A IC=0.4A, IB1=80mA VCC=300V IC=1A, IB1=200mA VCC=300V RESISTIVE LOAD SWITCHING (D.C < 10%, Pulse Width=20s) tON tOFF tON tOFF Turn On Time Turn Off Time IC=0.4A, IB1=80mA IB2=0.2A, VCC=300V RL = 750Ω IC=1A, IB1=160mA IB2=160mA, VCC=300V RL = 300Ω IC=0.4A, IB1=80mA IB2=0.2A, VZ=300V LC=200H TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C tSTG tF tC Storage Time Fall Time Cross-over Time IC=0.8A, IB1=160mA IB2=160mA, VCC=300V LC=200H TC=25°C TC=125°C TC=25°C TC=125°C TC=25°C TC=125°C 175 185 2.1 2.6 240 310 3.7 4.5 5.0 450 3.0 350 ns ns µs µs ns ns µs µs µs µs 200 350 4.5 250 600 ns ns ns ns µs µs ns ns ns ns @ 1µ s @ 3µ s @ 1µ s @ 3µ s Min Typ. 650 740 785 7.2 1.8 18 6 Max. Units ns ns ns V V V V VCE(DSAT) Turn On Time Turn Off Time INDUCTIVE LOAD SWITCHING (VCC=15V) tSTG tF tC Storage Time Fall Time Cross-over Time 1.2 1.5 90 65 185 145 3.3 3.75 90 160 300 570 2.0 ©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001 KSC5502D/KSC5502DT Typical Characteristics 3 IC[A ], C O L L E C T O R C U R R E N T hFE, D C C U R R E N T G A IN 1A 900m A 800m A 700m A 600m A 500m A 400m A 300m A 200m A I B =100m A V C E =1V 100 T J =125 ℃ T J =25 ℃ 2 10 1 0 0 1 2 3 4 5 6 7 1 1m 10m 100m 1 V C E [V ], C O L L E C T O R E M IT T E R V O L T A G E I C [A], C O LLE C T O R C U R R E N T ) Figure 1. Static Characteristic Figure 2. DC current Gain I C =5I B IC =10IB VCE(sat) (V), VOLTAGE 10 10 1 T J =125 ℃ VCE(sat) (V), VOLTAGE 1 T J =125 ℃ T J =25 ℃ T J =25 ℃ 0 .1 0.1 1m 1 0m 1 00 m 1 1m 10 m 10 0m 1 I C (A), C O LLE C T O R C U R R E N T I C (A), C O LLE C T O R C U R R E N T Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 2 T J =25 ℃ 10 I C =10I B 2.0A VC E[V], VO L T A G E 1.5A 1.0A 1 0.4A VBE[V], VO LT A G E 1 T J =25 ℃ I C =0.2A T J =125 ℃ 0 1m 10m 100m 1 0.1 1m 10m 100m 1 I B [A], BAS E C U R R EN T I C [A], C O L LE C T O R C U R R EN T Figure 5. Typical Collector Saturation Voltage Figure 6. Base-Emitter Saturation Voltage ©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001 KSC5502D/KSC5502DT Typical Characteristics (Continued) 10 10 IC =5I B VBE[V ], V O L T A G E VFD[V ], V O L T A G E 1 T J =25 ℃ 1 T J =25 ℃ T J =125 ℃ T J =125 ℃ 0.1 1m 10m 100m 1 0.1 1m 10m 100m 1 I C [A ], C O LLE C T O R C U R R E N T I F D [A ], F O R W A R D C U R R E N T Figure 7. Base-Emitter Saturation Voltage Figure 8. Diode Forward Voltage 1000 C ib F=1MHz 2000 I C =5I B 1 =2I B 2 V C C =300V P W=20us C A PA C IT AN C E[p F ] tON[ns],T IM E 1000 900 800 700 600 500 400 300 T J =25 ℃ 200 T J =125 ℃ 100 C ob 10 1 10 100 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 R E VE R SE VO LT A G E[V ] I C [A], C O LLEC T O R C U R R E N T Figure 9. Collector Output Capacitance Figure 10. Resistive Switching Time, ton 5 4.5 4 3.5 3 I C =5I B 1 =2I B 2 V C C =300V PW =20us 1000 900 800 700 600 500 400 T J =25 ℃ 300 2000 I C =5I B 1 =5I B 2 V c =300V PW=20us tO N(u s),TIM E 2.5 2 T J =125 ℃ T J =25 ℃ 1.5 200 tON(ns),TIM E T J =125 ℃ 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 I C [A ], C O L L E C T O R C U R R E N T I C [A], CO LLECT OR CU RRENT Figure 11. Resistive Switching Time, toff Figure 12. Resistive Switching Time, ton ©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001 KSC5502D/KSC5502DT Typical Characteristics (Continued) 7 6.5 6 5.5 5 IC =5I B 1 =5IB 2 V c =300V PW=20us 3 IC =5I B 1 =2I B 2 V C C =15V V Z =300V L C =200uH 2.5 tSTG(us),T IM E tO N(us),T IM E 4.5 4 T J =125 ℃ 2 T J =125 ℃ 3.5 T J =25 ℃ 1.5 T J =25 ℃ 3 2.5 2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 I C [A], C O LLEC T O R C U R R EN T IC [A], C O LLEC T O R C U R R E N T Figure 13. Resistive Switching Time, toff Figure 14. Inductive Switching Time, tSTG 600 I C =5IB 1 =2IB 2 V C C =15V V Z =300V L C =200uH 100 95 90 85 80 75 70 65 60 55 50 45 40 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 100 0.3 150 T J =25 ℃ T J =125 ℃ 550 500 450 400 350 I C =5IB 1 =2I B 2 V C C =15V V Z =300V L C =200uH tF(ns),T IM E tC[ns],T IM E 300 250 T J =125 ℃ 200 T J =25 ℃ 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 I C [A ], C O LLEC T O R C U R R EN T I C [A], C O LLEC T O R C U R R EN T Figure 15. Inductive Switching Time, tF Figure 16. Inductive Switching Time, tc 5 I C =5I B 1 =5I B 2 V C C =15V V Z =300V L C =200uH T J =125 ℃ 4.5 1000 900 800 700 600 500 400 I C =5IB 1 =5I B 2 V C C =15V V Z =300V L C =200uH 4 tSTG[u s],T IM E 3.5 T J =25 ℃ 3 tF[ns],TIM E T J =125 ℃ 300 200 T J =25 ℃ 2.5 100 90 80 70 60 2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 50 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 I C [A], C O L LEC T O R C U R R EN T I C [A], CO LLECTOR C URRENT Figure 17. Inductive Switching Time, tSTG Figure 18. Inductive Switching Time, tF ©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001 KSC5502D/KSC5502DT Typical Characteristics (Continued) 2000 2 I C =2IB 2 V C C =15V V Z =300V L C =200uH IC =0.8A tSTG[ns],TIM E 600 500 400 300 T J =25 ℃ tST G, T IM E [u s] 1000 900 800 700 IC =5I B 1 =5IB 2 V C C =15V V Z =300V L C =200uH T J =125 ℃ T J =25 ℃ T J =125 ℃ 1 200 I C =0.4A 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 I C [A], C O LLEC T O R C U R R EN T h F E , F O R C E D G AIN Figure 19. Inductive Switching Time, tc Figure 20. Inductive Switching Time, tSTG 200 IC =2I B 2 V C C =15V V Z =300V L C =200uH I C =0.8A 160 I C =2I B 2 V C C =15V V Z =300V L C =200uH 80 tF, T IM E[ns] tC, T IM E[ns] T J =25 ℃ T J =125 ℃ 60 IC =0.8A T J =25 ℃ T J =125 ℃ 120 IC =0.4A I C =0.4A 40 80 4 5 6 7 8 9 10 11 12 13 14 4 5 6 7 8 9 10 11 12 13 14 h F E , F O R C ED G AIN h F E , F O R C ED G AIN Figure 21. Inductive Switching Time, tF Figure 22. Inductive Switching Time, tc 10 T C =25 ℃ 60 IC[A], CO LLECT OR CU RR ENT PC[W ], PO W ER DISSIPATIO N 5ms DC 1ms 50us 50 1 40 30 0.1 20 10 0.01 10 100 1000 0 0 25 50 75 100 125 150 175 200 V C E [A], CO LLECT OR EM ITTER VO LTAG E T C ( ℃ ), CASE T EM PER ATU R E Figure 23. Forward Bias Safe Operating Area Figure 24. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001 KSC5502D/KSC5502DT Typical Characteristics (Continued) 10 T C =25 ℃ 60 IC[A], CO LLECT OR CU RR ENT 5ms DC 1ms 50us PC[W ], PO W ER D IS SIP AT IO N 50 1 40 30 0.1 20 10 0.01 10 100 1000 0 0 25 50 75 100 125 150 175 200 V C E [A], CO LLECT OR EM ITTER VO LTAG E T C ( ℃ ), C A SE T EM P ER AT U R E Figure 25. Forward Bias Safe Operating Area Figure 26. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001 KSC5502D/KSC5502DT Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001 KSC5502D/KSC5502DT Package Demensions (Continued) D-PAK 6.60 ±0.20 5.34 ±0.30 (0.50) (4.34) (0.50) 0.70 ±0.20 2.30 ±0.10 0.50 ±0.10 0.60 ±0.20 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 0.91 ±0.10 0.80 ±0.20 MAX0.96 2.30TYP [2.30±0.20] 0.76 ±0.10 2.30TYP [2.30±0.20] 0.89 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30 ±0.20 (0.70) (0.90) (0.10) (3.05) 6.10 ±0.20 9.50 ±0.30 2.70 ±0.20 (2XR0.25) 0.76 ±0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A2, August 2001 (1.00) 6.60 ±0.20 (5.34) (5.04) (1.50) MIN0.55 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H3