KSD1616

KSD1616/1616A KSD1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSB1116/1116A 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature : KSD1616 : KSD1616A : KSD1616 : KSD1616A Ratings 60 120 50 60 6 1 2 0.75 150 -55 ~ 150 Units V V V V V A A W °C °C * PW≤10ms, Duty Cycle < 50% Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VBE (on) VCE (sat) VBE (sat) Cob fT tON tSTG tF * Base-Emitter On Voltage * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain : KSD1616 : KSD1616A Test Condition VCB=60V, IE=0 VEB=6V, IC=0 VCE=2V, IC=100mA VCE=2V, IC=1A VCE=2V, IC=50mA IC=1A, IB=50mA IC=1A, IB=50mA VCE=10V, IE=0, f=1MHz VCE=2V, IC=100mA VCC=10V, IC=100mA IB1= -IB2=10mA VBE (off) = -2~-3V 100 135 135 81 600 640 0.15 0.9 19 160 0.07 0.95 0.07 Min. Typ. Max. 100 100 600 400 700 0.3 1.2 mV V V pF MHz µs µs µs Units nA nA * Pulse Test: PW