KSD1621

KSD1621 KSD1621 High Current Driver Applications • • • • Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSB1121 1 SOT-89 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC PC* TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 1. Base 2. Collector 3. Emitter Ratings 30 25 6 2 500 1.3 150 -55 ~ 150 Units V V V A mW W °C °C * Mounted on Ceramic Board (250mm2x0.8mm) Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) fT Cob tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth product Output Capacitance * Turn On Time * Storage Time * Fall Time Test Condition IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VBE=4V, IC=0 VCE=2V, IC=0.1A VCE=2V, IC=1.5A IC=1.5A, IB=75mA IC=1.5A, IB=75mA VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz VCC=12V, VBE=5V IB1= -IB2=25mA IC=0.5A, RL=25Ω 100 65 0.18 0.85 150 19 60 500 25 Min. 30 25 6 100 100 560 0.4 1.2 V V MHz pF ns ns ns Typ. Max. Units V V V nA nA * Pulse Width=20µs, Duty Cycle≤1% hFE Classification Classification hFE R 100 ~ 200 Marking S 140 ~ 280 T 200 ~ 400 U 280 ~ 560 SYX hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KSD1621 Typical Characteristics 2.0 1000 IB = 50mA IB = 30mA IB = 20mA VCE= 2V IC[A], COLLECTOR CURRENT 1.6 hFE, DC CURRENT GAIN IB = 10mA IB = 8mA IB = 6mA 0.8 100 1.2 IB = 4mA 0.4 10 IB = 2mA IB = 0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 3.2 VCE(sat)[V], SATURATION VOLTAGE IC = 10 IB 2.8 VCE = 2V IC[A], COLLECTOR CURRENT 2.4 1 2.0 1.6 1.2 0.1 0.8 0.4 0.01 0.01 0.1 1 10 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IC[A], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 1000 IE =0 f = 1MHz VCE = 10V Cob[pF], CAPACITANCE 100 100 10 1 0.1 10 0.1 1 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KSD1621 Typical Characteristics (Continued) 10 1.6 IC MAX. (Pulse) IC MAX. (DC) PC[W], POWER DISSIPATION s m 10 s 1m IC[A], COLLECTOR CURRENT s 0m 10 1.2 ou M nt 1 ed on Ce ra ic m 0.8 a Bo rd 5 (2 0.1 0m Ta=25 C Single Pulse Mounted on Ceramic Board 2 (250mm × 0.8mm) o m 0.4 No 2 Hea × t Sin 0. k m 8m ) 0.01 0.1 0.0 1 10 100 0 50 o 100 150 200 VCE[V], COLLECTOR-EMITTER VOLTAGE Ta[ C], AMBIENT TEMPERATURE Figure 7. Safe Operating Area Figure 8. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KSD1621 Package Dimensions SOT-89 4.50 ±0.20 1.65 ±0.10 C0.2 (0.50) 1.50 ±0.20 (0.40) ±0.20 2.50 0.50 ±0.10 1.50 TYP 1.50 TYP 0.40 ±0.10 0.40 +0.10 –0.05 (1.10) 4.10 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1