KSD1692

KSD1692 KSD1692 Feature • • • • High Dc Durrent Gain Low Collector Saturation Voltage Built-in a Damper Diode at E-C High Power Dissipation : PC = 1.3W (Ta=25°C) TO-126 2.Collector 3.Base 1 1. Emitter NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 150 100 8 3 5 1.3 15 150 - 55 ~ 150 Units V V V A A A W W °C * PW≤10ms, duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector Cut-off Current Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition VCB = 100V, IE = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 1.5A VCE = 2V, IC = 3A IC = 1.5A, IB = 1.5mA IC = 1.5A, IB = 1.5mA VCC = 40V, IC = 1.5A IB1 = - IB2 = 1.5mA R L = 2 7Ω 2K 1K 0.9 1.5 0.5 2 1 Min. Typ. Max. 10 2 20K 1.2 2 V V µs µs µs Units µA mA * Pulse test: PW≤350µs, duty Cycle≤2% Pulsed hFE Classificntion Classification hFE1 O 2000 ~ 5000 Y 4000 ~ 12000 G 6000 ~ 20000 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1692 Typical Characteristics 5 100000 Ic[A], COLLECTOR CURRENT 4 IB = 200uA hFE, DC CURRENT GAIN IB = 450uA IB = 400uA IB = 350uA IB = 300uA IB = 250uA 00uA IB = 5 VCE = 2V Pulsed 10000 3 IB = 150uA IB = 100uA 2 1000 1 IB = 50uA 0 0 1 2 3 4 5 100 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 10 Ic = 1000 IB Pulsed Ic(Pulse) Ic(DC) IC[A], COLLECTOR CURRENT Dis s 1 ipa tio m 20 0m s s 10 s 0u 10 us 0 30 s 1m 10 nL im ite d s/b Lim V BE(sat) 1 ite d 0.1 V CE(sat) 0.1 0.1 1 10 Tc=25 C Single Pulse 0.01 1 10 100 500 o IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Forward Bias Safe Operating Areas 160 20 140 PC[W], POWER DISSIPATION 120 15 dT[%], Ic DERATING 100 80 s/b DI 10 LIM 60 ITE D TI O SS IP A 40 N 5 LI 20 M IT ED 0 25 50 o 0 75 100 125 150 175 200 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE TC[ C], CASE TEMPERATURE Figure 5. Derating Curve of Safe Operating Areas Figure 6. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1692 Package Demensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20 (1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 ±0.30 (0.50) 1.75 ±0.20 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 13.06 16.10 ±0.20 0.50 –0.05 +0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2000 Fairchild Semiconductor International Rev. E