KSD526

KSD526 NPN Epitaxial Silicon Transistor April 2006 KSD526 NPN Epitaxial Silicon Transistor Power Amplifier Applications • Complement to KSB596 1 TO-220 2.Collector 3.Emitter 1.Base Absolute Maximum Ratings * Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Ta = 25°C unless otherwise noted Parameter Value 80 80 5 4 0.4 30 150 -55~150 Units V V V A A W °C °C IB PC Base Current Collector Dissipation ( TC=25°C) Junction Temperature Storage Temperature TJ TSTG * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Electrical Characteristics Symbol ICBO IEBO BVCEO BVEBO hFE VCE(sat) VBE(on) fT Ccb TC = 25°C unless otherwise noted Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain - Bandwidth Product Collector Output Capacitance Test Condition VCB = 80V, IE = 0 VEB = 5V, IC = 0 IC = 50mA, IB = 0 IE = 10mA, IC = 0 VCE = 5V, IC = 0.5A VCE = 5V, IC = 3A IC = 3A, IB = 0.3A VCE = 5V, IC = 3A VCE = 5V, IC = 0.5A VCB = 10V, IE = 0, f = 1MHz MIN MAX MAX 30 100 Units μA μA V V 80 5 40 15 240 50 0.45 1 3 8 90 1.5 1.5 V V MHz pF hFE Classification Classification hFE R 40∼80 O 70∼140 Y 120∼240 ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com KSD526 Rev. A1 KSD526 Power Amplifier Applications Typical Characteristics 4.0 1000 IC[A], COLLECTOR CURRENT IB = 240mA 3.2 IB = 200mA IB = 160mA IB = 120mA IB = 100mA IB = 80mA IB = 60mA VCE = 5V 2.4 IB = 40mA hFE, DC CURRENT GAIN 100 1.6 IB = 20mA 0.8 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 10 1E-3 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 4 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 IC = 10 IB IC[A], COLLECTOR CURRENT VCE = 5V 3 1 2 0.1 VCE(sat) 1 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.01 0.1 1 10 VBE[V], BASE-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter On Voltage Figure 4. Collector-Emitter Saturation Voltage 100 40 35 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 30 25 20 15 10 5 0 10 ICMAX. (pulse) 1s m 10 s 0m 10 IC MAX. (continuous) s m 1S 1 0.1 VCEO MAX É) C D 25¡ = (T C 1 10 100 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating KSD526 Rev. A1 2 www.fairchildsemi.com KSD526 Power Amplifier Applications Package Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) ) (45° 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters KSD526 Rev. A1 3 www.fairchildsemi.com KSD526 Power Amplifier Applications TRADEMARKS TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 Preliminary No Identification Needed Full Production Obsolete Not In Production 4 KSD526 Rev. A1 www.fairchildsemi.com