KSD882Y

KSD882 KSD882 Audio Frequency Power Amplifier Low Speed Switching • Complement to KSB772 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 40 30 5 3 7 0.6 10 1 150 - 55 ~ 150 Units V V V A A A W W °C °C * PW≤10ms, Duty Cycle≤50% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB = 30V, IE = 0 VEB = 3V, IC = 0 VCE = 2V, IC = 20mA VCE = 2V, IC = 1A IC = 2A, IB = 0.2A IC = 2A, IB = 0.2A VCE = 5V, IE = 0.1A VCB = 10V, IE = 0 f = 1MHz 30 60 150 160 0.3 1.0 90 45 Min. Typ. Max. 1 1 400 0.5 2.0 V V MHz pF Units µA µA * Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed hFE Classificntion Classification hFE2 R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 G 200 ~ 400 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD882 Typical Characteristics 2.0 1000 IC[A], COLLECTOR CURRENT 1.6 IB = 10mA IB = 8mA IB = 7mA IB = 6mA IB = 5mA VCE = 2V 1.2 hFE, DC CURRENT GAIN IB = 9mA 100 0.8 IB = 4mA IB = 3mA 0.4 IB = 2mA 0.0 0 IB = 1mA 4 8 12 16 20 10 1E-3 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT 1000 IC = 10 IB 1 VCE = 5V V BE(sat) 100 0.1 VCE(sat) 0.01 10 1E-3 1E-3 0.01 0.1 1 10 1 0.01 0.1 1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Current Gain Bandwidth Product 1000 10 0 10 m 10 IE=0 f=1MHz ICMAX. (pulse) us s s 1m IC[A], COLLECTOR CURRENT IC M AX. (DC) Diss 1 Cob[pF], CAPACITANCE ipa t io nL im ite d b S/ m Li 100 d ite 0.1 10 1 10 100 0.01 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Collector Output Capacitance Figure 6. Safe Operating Area ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD882 Typical Characteristics (Continued) 160 16 140 14 120 PC[W], POWER DISSIPATION 125 150 175 200 dT(%), IC DERATING 12 100 10 80 S/b L im it e d 8 60 Di ss 6 ip 40 at ion Li m 4 20 ite d 2 0 0 25 50 o 0 75 100 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE TC[ C], CASE TEMPERATURE Figure 7. Derating Curve Of Safe Operating Areas Figure 8. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD882 Package Demensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20 (1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 ±0.30 (0.50) 1.75 ±0.20 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 13.06 16.10 ±0.20 0.50 –0.05 +0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ E2CMOS™ FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ DISCLAIMER HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench® QFET™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2000 Fairchild Semiconductor International Rev. E