KSE13003

KSE13003 KSE13003 High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-126 2.Collector 3.Base 1. Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 700 400 9 1.5 3 0.75 20 150 - 65 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO IEBO hFE VCE(sat) Parameter Collector-Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector Emitter Saturation Voltage Test Condition IC = 5mA, IB = 0 VEB = 9V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC =1A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A IC = 1.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A VCB = 10V , f = 0.1MHz VCE = 10V, IC = 0.1A VCC =125V, IC = 1A IB1 = 0.2A, IB2 = - 0.2A RL = 125Ω 4 1.1 4.0 0.7 21 8 5 Min. 400 Typ. Max. 10 40 0.5 1 3 1 1.2 V V V V V pF MHz µs µs µs Units V µA VBE(sat) Cob fT tON tSTG tF *Base Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time * Pulse Test: Pulse Width=5ms, Duty Cycle≤10% ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSE13003 Typical Characteristics 2.0 100 IC[A], COLLECTOR CURRENT VCE = 2V 1.6 hFE, DC CURRENT GAIN IB = 500mA IB = 450mA IB = 400mA 1.2 IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA IB = 50mA 10 0.8 1 0.4 IB = 0mA 0.0 0 1 2 3 4 5 0.1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 10 IC = 4 IB tSTG 1 tSTG, tF[µs], TIME VBE(sat) 1 tF 0.1 0.1 VCE(sat) 0.01 0.01 0.1 1 10 0.01 0.1 1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Switching Time 10 30 ICMAX. (pulse) µ 10 s 25 IC[A], COLLECTOR CURRENT IC MAX. (DC) 1 PC[W], POWER DISSIPATION s 1m s 5m 0µ 10 s 20 15 0.1 10 5 0.01 1 10 100 1000 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 KSE13003 Package Dimensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20 (1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 ±0.30 (0.50) 1.75 ±0.20 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 13.06 16.10 ±0.20 0.50 –0.05 +0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1