KSE13003H2ASTU

KSE13003 — NPN Silicon Transistor March 2008 KSE13003 NPN Silicon Transistor High Voltage Switch Mode Applications • High Voltage Capability • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-126 2.Collector 3.Base 1. Emitter Absolute Maximum Ratings* Symbol V CBO V CEO V EBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current T C = 25°C unless otherwise noted (notes_1) Parameter Value 700 400 9 1.5 3 0.75 20 150 -65 ~ 150 Units V V V A A A W °C °C Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES_1: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. hFE Classification Classification hFE* * Test on VCE = 2V, IC = 0.5A. H1 9 ~ 16 H2 14~ 21 H3 19 ~ 26 © 2007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 1 www.fairchildsemi.com KSE13003 — NPN Silicon Transistor Electrical Characteristics Symbol BVCEO IEBO hFE VCE(sat) TC = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Emitter Cut-off Current *DC Current Gain *Collector Emitter Saturation Voltage Conditions IC = 5mA, IB = 0 VEB = 9V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC =1A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A IC = 1.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.25A VCB = 10V , f = 0.1MHz VCE = 10V, IC = 0.1A VCC =125V, IC = 1A IB1 = 0.2A, IB2 = - 0.2A RL = 125W Min. 400 Typ. Max 10 Units V mA 8 5 40 0.5 1 3 1 1.2 21 V V V V V pF MHz 1.1 4.0 0.7 ms ms ms VBE(sat) Cob fT tON tSTG tF *Base Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time 4 * Pulse Test: Pulse Width=5ms, Duty Cycle£10% Package Marking and Ordering Information Device Item (notes_2) KSE13003H1ASTU KSE13003H2ASTU KSE13003H3ASTU Notes_2 : 1) The Affix “-H1/-H2/-H3” means the hFE classification. 2) The Sufix “-STU” means the TO126 short lead package and the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com Device Marking 1 E13003 2 E13003 3 E13003 Package TO-126 TO-126 TO-126 Packing Method TUBE TUBE TUBE Remarks © 2007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 2 www.fairchildsemi.com KSE13003 — NPN Silicon Transistor Typical Performance Characteristics 2.0 100 IC[A], COLLECTOR CURRENT 1.6 hFE, DC CURRENT GAIN IB = 500mA IB = 450mA IB = 400mA VCE = 2V 1.2 IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA IB = 50mA 10 0.8 1 0.4 IB = 0mA 0.0 0 1 2 3 4 5 0.1 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 10 IC = 4 IB tSTG, tF[ms], TIME 1 VBE(sat) tSTG 1 tF 0.1 0.1 VCE(sat) 0.01 0.01 0.1 1 10 0.01 0.1 1 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Switching Time 10 30 ICMAX. (pulse) ms 10 25 s 1m IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION IC MAX. (DC) 1 s 5m s 0m 10 20 15 0.1 10 5 0.01 0 1 10 100 1000 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area © 2007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 3 Figure 6. Power Derating www.fairchildsemi.com KSE13003 KSE13003 NPN Silicon Transistor © 2 007 Fairchild Semiconductor Corporation KSE13003 Rev. 1.0.0 4 www.fairchildsemi.com