KSE45H4

KSE45H Series KSE45H Series General Purpose Power Switching Applications • Low Collector-Emitter Saturation Voltage: VCE(sat) = -1V (MAX)@-8A • Fast Switching Speeds • Complement to KSE44H TO-220 2.Collector 3.Emitter 1 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter : KSE45H 1,2 : KSE45H 4,5 : KSE45H 7,8 : KSE45H 10,11 Value - 30 - 45 - 60 - 80 -5 - 10 - 20 50 1.67 150 - 55 ~ 150 Units V V V V V A A W W °C °C VEBO IC ICP PC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES IEBO hFE Parameter Collector Cut-off Current Emitter Cut-off Current *DC Current Gain : KSE45H 1, 4, 7 10 : KSE45H 2, 5, 8,11 *Collector-Emitter Saturation Voltage : KSE45H 1, 4, 7 10 : KSE45H 2, 5, 8,11 *Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCE = Rated, VCEO, VEB = 0 VEB = - 5V, IC = 0 VCE = - 1V, IC = - 2A 35 60 -1 -1 -1.5 40 230 135 500 100 V V V MHz pF ns ns ns Min. Typ. Max. -10 -100 Units µA µA VCE(sat) IC = - 8A, IB = - 0.8A IC = - 8A, IB = - 0.4A IC = - 8A, IB = - 0.8A VCE = - 10V, IC = - 0.5A VCB = - 10V, f = 1MHz VCC =20V, IC = - 5A IB1 = - IB2 = - 0.5A VBE(sat) fT Cob tON tSTG tF * Pulse test: PW≤300µs, Duty cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSE45H Series Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 VCE = 1 V IC = 10 IB hFE, DC CURRENT GAIN 100 -1 V BE(sat) 10 -0.1 VCE(sat) 1 -0.01 -0.1 -1 -10 -0.01 -0.01 -0.1 -1 -10 -100 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 100 f=1MHZ IC[A], COLLECTOR CURRENT Cob[pF], CAPACITANCE 10 DC s 1m 100 s 1µ 1 1µs 45H 1,2 45H 4,5 45H 7,8 45H 10,11 0.1 1 10 100 1000 10µs 100µs 10 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Collector Output Capacitance Figure 4. Safe Operating Area 60 50 PC[W], POWER DISSIPATION 40 30 20 10 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSE45H Series Package Demensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H3