KSE802

KSE800/801/802/803 KSE800/801/802/803 Monolithic Construction With Built-in BaseEmitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature : KSE800/801 : KSE802/803 : KSE800/801 : KSE802/803 Value 60 80 60 80 5 4 0.1 40 150 - 55 ~ 150 Units V V V V V A A W °C °C R1 R2 E B Equivalent Circuit C R 1 ≅ 10 k Ω R 2 ≅ 0.6 k Ω Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage : KSE800/801 : KSE802/803 Collector Cut-off Current : KSE800/801 : KSE802/803 Collector Cut-off Current Test Condition IC = 50mA, IB = 0 Min. 60 80 100 100 100 500 2 750 750 100 2.5 2.8 3 2.5 2.5 3 V V V V V V Max. Units V V µA µA µA µA mA ICEO VCE = 60V, IB = 0 VCE = 80V, IB = 0 VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 TC = 100°C VBE = 5V, IC = 0 VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A IC = 1.5A, IB = 30mA IC = 2A, IB = 40mA IC = 4A, IB = 40mA VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A ICBO IEBO hFE Emitter Cut-off Current DC Current Gain : KSE800/802 : KSE801/803 : ALL DEVICES VCE(sat) Collector-Emitter Saturation Voltage : KSE800/802 : KSE801/803 : ALL DEVICES Base-Emitter ON Voltage : KSE800/802 : KSE801/803 : ALL DEVICES VBE(on) ©2001 Fairchild Semiconductor Corporation Rev. A3, June 2001 KSE800/801/802/803 Typical Characteristics 5 10000 A IB= 500µ VCE = 3V IC(A),COLLECTOR CURRENT 4 IB= 350µ A 3 hFE, DC CURRENT GAIN 5 IB= 450µA IB= 400µ A IB= 300µA IB= 250µA IB= 200µA 1000 IB= 150µ A IB= 100µA 2 100 1 IB= 50µA 0 0 1 2 3 4 10 0.01 0.1 1 10 V CE(V),COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 100 1000 IC = 500 IB f=0.1MHZ IE=0 Cob[pF], CAPACITANCE 10 100 VBE(sat) 1 10 VCE(sat) 0.1 0.01 0.1 1 10 1 0.01 0.1 1 10 100 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 100 60 50 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 1000 10 40 10 0µ s 1m s 5m s D .C . 30 1 20 KSE800/801 KSE802/803 0.1 1 10 100 10 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A3, June 2001 KSE800/801/802/803 Package Demensions TO-126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20 (1.00) 0.75 ±0.10 1.60 ±0.10 0.75 ±0.10 ±0.30 (0.50) 1.75 ±0.20 #1 2.28TYP [2.28±0.20] 2.28TYP [2.28±0.20] 13.06 16.10 ±0.20 0.50 –0.05 +0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A3, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation Rev. H3