KSH117

KSH117 KSH117 D-PAK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP117 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector PNP Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value - 100 - 100 -5 -2 -4 - 50 20 1.75 150 - 65 ~ 150 Units V V V A A mA W W °C °C R1 R2 E B Equivalent Circuit C R 1 ≅ 10 k Ω R 2 ≅ 0.6 k Ω Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO (sus) ICEO ICBO IEBO hFE Parameter *Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current *DC Current Gain Test Condition IC = - 30mA, IB = 0 VCE = - 50V, IB = 0 VCB = - 100V, IE = 0 VEB = - 5V, IC = 0 VCE = - 3V, VEB = - 0.5A VCE = - 3V, VEB = - 2A VCE = - 3V, IC = - 4A IC = -2A, IB = - 8mA IC = - 4A, IB = - 40mA IC = - 4A, IB = - 40mA VCE = - 3A, IC = - 2A VCE = -10V, IC = - 0.75A VCB = - 10V, IE = 0 f= 0.1MHz 25 200 500 1000 200 Min. - 100 Max. - 20 - 20 -2 12K -2 -3 -4 - 2.8 V V V V MHz pF Units V µA µA mA VCE(sat) VBE(sat) VBE(on) fT Cob *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage *Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 KSH117 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10000 -10 VCE = - 3V IC = 250 IB hFE, DC CURRENT GAIN V BE(sat) -1 1000 VCE(sat) 100 -0.1 10 -0.01 -0.1 -1 -10 -0.01 -0.01 -0.1 -1 -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 10 VCC= - 30V IC=250IB VCC=30V IC=250IB tSTG,tF[µs], TURN OFF TIME tR, tD(µs), TURN ON TIME tSTG 1 1 tF tR tD 0.1 -0.01 0.1 -0.01 -0.1 -1 -10 -0.1 -1 -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance Figure 4. Turn On Time 1000 -10 s 0µ 10 IC[A], COLLECTOR CURRENT Cob[pF], CAPACITANCE 100 -1 DC 1 5m ms s 10 -0.1 1 -0.01 -0.01 -0.1 -1 -10 -100 -1 -10 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Turn Off Time Figure 6. Safe Operating Area ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 KSH117 Typical Characteristics (Continued) 25 PC[W], POWER DISSIPATION 20 15 10 5 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 KSH117 Package Dimensions D-PAK 6.60 ±0.20 5.34 ±0.30 (0.50) (4.34) (0.50) 0.70 ±0.20 2.30 ±0.10 0.50 ±0.10 0.60 ±0.20 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 0.91 ±0.10 0.80 ±0.20 MAX0.96 2.30TYP [2.30±0.20] 0.76 ±0.10 2.30TYP [2.30±0.20] 0.89 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30 ±0.20 (0.70) (0.90) (0.10) (3.05) 6.10 ±0.20 9.50 ±0.30 2.70 ±0.20 (2XR0.25) 0.76 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 (1.00) 6.60 ±0.20 (5.34) (5.04) (1.50) MIN0.55 KSH117 Package Dimensions (Continued) I-PAK 6.60 ±0.20 5.34 ±0.20 (0.50) (4.34) (0.50) 0.50 ±0.10 2.30 ±0.20 ±0.20 ±0.20 0.60 0.70 ±0.10 6.10 ±0.20 0.80 ±0.20 1.80 MAX0.96 0.76 ±0.10 9.30 ±0.30 2.30TYP [2.30±0.20] 2.30TYP [2.30±0.20] 0.50 ±0.10 ©2002 Fairchild Semiconductor Corporation 16.10 ±0.30 Dimensions in Millimeters Rev. A4, October 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1