KSH200

KSH200 KSH200 D-PAK for Surface Mount Applications • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ Suffix) 1 D-PAK 1.Base 1 I-PAK 3.Emitter 2.Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IB IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC = 25°C) Collector Dissipation (Ta = 25°C) Junction Temperature Storage Temperature Value 40 25 8 1 5 10 12.5 1.4 150 - 55 ~ 150 Units V V V A A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol VCBO(sus) ICEO ICBO IEBO hFE VCE (sat) Parameter * Collector Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage Test Condition IC=100mA, IB=0 VCB=40V, IE=0 VEBO=8V, IC=0 VCE=1V, IC=500mA VCE=1V, IC=2A VCE=2V, IC=5A IC=500mA, IB=50mA IC=2A, IB=200mA IC=5A, IB=1A IC=5A, IB=2A VCE=1V, IC=2A VCE=10V, IC=100mA VCB=10V, IE=0, f=0.1MHz 65 80 70 45 10 180 0.3 0.75 1.8 2.5 1.6 V V V V V MHz pF Min. 25 Max. 100 100 Units V nA nA VBE (sat) VBE (on) fT Cob * Base-Emitter Saturation Voltage * Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A3, October 2002 KSH200 Typical Characteristics 1000 10 VCE(sat), VBE(sat) [V], SATURATION VOLTAGE IC=10IB hFE, DC CURRENT GAIN 100 1 VBE(sat) VCE=2V VCE=1V 10 sat) V CE( 0.1 1 0.01 0.1 1 10 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 10 VCC =30V IC =10IB tR,tD[ns], TURN ON TIME Cob[pF], CAPACITANCE 100 1 tR 10 0.1 tD 1 0.1 1 10 100 0.01 0.01 0.1 1 10 VCB[V], COLLECTOR BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance Figure 4. Turn On Time 1000 100 tSTG IC[A], COLLECTOR CURRENT VCC=30V IC=10IB IB1=-IB2 tSTG,tF[ns], TURN OFF TIME 10 s 0µ 10 5m s 50 0 1mµs s tF 100 DC 1 0.1 10 0.01 0.1 1 10 0.01 0.1 1 10 100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Turn Off Time Figure 6. Safe Operating Area ©2002 Fairchild Semiconductor Corporation Rev. A3, October 2002 KSH200 Typical Characteristics (Continued) 20.0 17.5 PC[W], POWER DISSIPATION 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A3, October 2002 KSH200 Package Dimensions D-PAK 6.60 ±0.20 5.34 ±0.30 (0.50) (4.34) (0.50) 0.70 ±0.20 2.30 ±0.10 0.50 ±0.10 0.60 ±0.20 6.10 ±0.20 2.70 ±0.20 9.50 ±0.30 0.91 ±0.10 0.80 ±0.20 MAX0.96 2.30TYP [2.30±0.20] 0.76 ±0.10 2.30TYP [2.30±0.20] 0.89 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30 ±0.20 (0.70) (0.90) (0.10) (3.05) 6.10 ±0.20 9.50 ±0.30 2.70 ±0.20 (2XR0.25) 0.76 ±0.10 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A3, October 2002 (1.00) 6.60 ±0.20 (5.34) (5.04) (1.50) MIN0.55 KSH200 Package Dimensions (Continued) I-PAK 6.60 ±0.20 5.34 ±0.20 (0.50) (4.34) (0.50) 0.50 ±0.10 2.30 ±0.20 ±0.20 ±0.20 0.60 0.70 ±0.10 6.10 ±0.20 0.80 ±0.20 1.80 MAX0.96 0.76 ±0.10 9.30 ±0.30 2.30TYP [2.30±0.20] 2.30TYP [2.30±0.20] 0.50 ±0.10 ©2002 Fairchild Semiconductor Corporation 16.10 ±0.30 Dimensions in Millimeters Rev. A3, October 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1