KSK30R

KSK30 KSK30 Low Noise PRE-AMP. Use • High Input Impedance: IGSS=1nA (MAX) • Low Noise: NF=0.5dB (TYP) • High Voltage: VGDS= -50V 1 TO-92 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VGDS IG PD TJ TSTG Parameter Gate-Drain Voltage Gate-Current Collector Dissipation Junction Temperature Storage Temperature Ratings -50 10 100 125 -55 ~ 125 Units V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVGDS IGSS IDSS VGS (off) YFS Ciss Crss NF Parameter Gate-Drain Breakdown Voltage Gate Leak Current Drain Leak Current Gate-Source Voltage Forward Transfer Admittance Input Capacitance Feedback Capacitance Noise Figure Test Condition VDS=0, IG= -100µA VGS= -30V, VDS=0 VDS=10V, VGS=0 VDS=10V, ID=0.1µA VDS=10V, VGS=0, f=1KHz VDS=0, VGS=0, f=1MHz VGD=10V, VDS=0 f=1MHz VDS=15V, VGS=0 RG=100KΩ f=120Hz 0.3 -0.4 1.2 8.2 2.6 0.5 5 Min. -50 Typ. Max. -1 6.5 -5 Units V nA mA V mS pF pF dB IDSS Classification Classification IDSS(mA) R 0.30 ~ 0.75 O 0.60 ~ 1.40 Y 1.20 ~ 3.00 G 2.60 ~ 6.50 ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 KSK30 Typical Characteristics 6.4 3.0 VGS = 0V 5.6 VDS = 10V ID[mA], DRAIN CURRENT VGS = -0.2V 2.0 ID[mA], DRAIN CURRENT 2.5 4.8 VGS = -0.4V 1.5 4.0 3.2 V =0 VGS = -0.6V VGS = -0.8V VGS = -1.0V 2.4 VD 1.0 S 1.6 RS = 1kΩ RS = 2kΩ 0.5 0.0 -1.6 -40 VGS = -1.2V VGS = -1.4V VGS = -1.6V -0.8 -20 0 20 0.8 RS = 5kΩ RS = 10kΩ -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.0 40 60 0.0 -3.2 VGS[V], DRAIN-SOURCE VOLTAGE VDS[V], DRAIN-SOURCE VOLTAGE VGS[V], GATE-SOURCE VOLTAGE Figure 1. Static Characteristic Figure 2. ID-VGS lYFSl[mS], FORWARD TRANSTER ADMITTANCE 4.0 4.0 VDS = 10V f = 1KHz 3.2 ID[mA], DRAIN CURRENT 3.2 VGS = 0V 2.4 VGS = -0.2V VGS = -0.4V VGS = -0.6V 2.4 1.6 1.6 0.8 VGS = -1.2V VGS = -0.8V VGS = -1.0V 0.8 VGS = -1.6V VGS = -1.4V 0.0 0.0 0.8 1.6 2.4 3.2 4.0 0.0 -4.0 -3.2 -2.4 -1.6 -0.8 0.0 VDS[V], DRAIN-SOURCE VOLTAGE VGS[V], GATE-SOURCE VOLTAGE Figure 3. ID-VDS Figure 4. Yfs-VGS lYFSl [mS], FORWARD TRANSFER ADMITTANCE 6.4 -10 VGS(off)[V], GATE-SOURCE VOLTAGE VDS = 10V f = 1kHz IDSS :VDS = 10V VGS=0 VGS(off):VDS =10V ID = 0.1µ A 4.8 3.2 0. 4m I DS S = A S= 1 7m I DS 0. A = 2.8 .7m I DSS mA IDSS = 6m A -1 ID 1.6 SS = A 0.0 0.0 1.6 3.2 4.8 6.4 - 0.1 0.1 1 10 ID[mA], DRAIN CURRENT IDSS[mA], DRAIN CURRENT Figure 5. Yfs-ID Figure 6. VGS(off)-IDSS ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 KSK30 Typical Characteristics (Continued) lYFSl [mS], FORWARD TRANSFER ADMITTANCE 100 1000 Crss[pF], FEEDBACK CAPACITACE Ciss[pF], INPUT CAPACITACE 10 IDSS :VDS=10V VGS=0V lYFSl:VDS=10V VGS=0V f=1kHz Ta = 25℃ Ciss: VDS = 0 Crss: VGS = 0 f = 1MHz 100 10 1 1 0.1 0.1 0.1 1 10 100 -0 -2 -4 -6 -8 -10 IDSS[mA], DRAIN CURRENT VGD[V], GATE-DRAIN VOLTAGE VGS[V], GATE-SOURCE VOLTAGE Figure 7. Yfs-IDSS Figure 8. Ciss-VGS, Crss-VGD 160 140 PC[mW], POWER DISSIPATION 120 100 80 60 40 20 0 0 25 50 o 75 100 125 150 175 200 TC[ C], CASE TEMPERATURE Figure 9. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. B1, November 2002 KSK30 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1