KSP14

KSP13/14 KSP13/14 Darlington Transistor • Collector-Emitter Voltage: VCES=30V • Collector Power Dissipation: PC (max)=625mW 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCES VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 30 10 500 625 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCES ICBO IEBO hFE Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain : KSP13 : KSP14 : KSP13 : KSP14 VCE (sat) VBE (on) fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCE=5V, IC=10mA VCE=5V, IC=100mA IC=100mA, IB=0.1mA VCE=5V, IC=100mA VCE=5V, IC=10mA f=100MHz 125 5K 10K 10K 20K 1.5 2.0 V V MHz Test Condition IC=100µA, IB=0 VCB=30V, IE=0 VEB=10V, IC=0 Min. 30 Max. 100 100 Units V nA nA * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP13/14 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1M 10 VCE = 5V IC = 1000 IB hFE, DC CURRENT GAIN 100k V BE(sat) 1 V CE(sat) 10k 1k 1 10 100 1000 0.1 10 100 IC [mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 VCE = 5V 100 VCE = 5V IC[mA], COLLECTOR CURRENT 100 10 1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 10 1 10 100 VBE [V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter On Voltage Figure 4. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP13/14 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1