KSP2222A NPN General Purpose Amplifier
July 2006
KSP2222A
NPN General Purpose Amplifier
Features
• Collector-Emitter Voltage: VCEO= 40V • Collector Power Dissipation: PC (max)=625mW • Available as PN2222A TO-92
tm
1 23
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings * T
Symbol
VCBO VCEO VEBO IC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector current Junction Temperature Storage Temperature
a
= 25°C unless otherwise noted
Parameter
Value
75 40 6.0 600 +150 -55 ~ +150
Units
V V V mA °C °C
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T =25°C unless otherwise noted
a
Symbol
PC RθJC RθJA
Parameter
Collector Power Dissipation, by RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
a
Max
625 83.3 200
Units
mW °C/W °C/W
Electrical Characteristics * T
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE
= 25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Test Condition
IC = 10µA, IE = 0 IC = 10mA, IB = 0 IE = 10µA, IC = 0 VCB = 60V, IE = 0 VEB = 3.0V, IC = 0 VCE = 10V, IC = 0.1mA, VCE = 10V, IC = 1mA, VCE = 10V, IC = 10mA, VCE = 10V, IC = 150mA, VCE = 10V, IC = 500mA, IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 20mA, VCE = 20V, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz VCC= 30V, IC = 150mA, IB1= 15mA, VBE(off)= 0.5V VCC= 30V, IC = 150mA, IB1= IB1 = 15mA IC = 100µA, VCE= 10V, RS= 1KΩ , f = 1.0KHz
Min.
75 40 6.0
Typ.
Max.
Units
V V V µA nA
0.01 10 35 50 75 100 40
300 0.3 1 1.2 2.0 8 35 285 4 V V V V MHz pF ns ns dB
VCE(sat) VBE(sat) fT Cobo tON tOFF NF
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Turn Off Time Noise Figure
0.6 300
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
KSP2222A Rev. B
KSP2222A NPN General Purpose Amplifier
Package Dimensions
TO-92
4.58 –0.15
+0.25
0.46
14.47 ±0.40
±0.10
4.58 ±0.20
1.27TYP [1.27 ±0.20] 3.60
±0.20
1.27TYP [1.27 ±0.20]
0.38 –0.05
+0.10
3.86MAX
1.02 ±0.10
0.38 –0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
2 KSP2222A Rev. B
www.fairchildsemi.com
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I20