KSP25TA

KSP25/26/27 KSP25/26/27 Darlington Transistor • Collector-Emitter Voltage: VCES=KSP25: 40V KSP26: 50V KSP27: 60V • Collector Power Dissipation: PC (max) =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Parameter Collector-Emitter Voltage : KSP25 : KSP26 : KSP27 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 40 50 60 10 500 625 150 -55~150 V V V V mA mW °C °C Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCES Parameter Collector-Emitter Breakdown Voltage : KSP25 : KSP26 : KSP27 Collector-Base Breakdown Voltage : KSP25 : KSP26 : KSP27 Collector Cut-off Current : KSP25 : KSP26 : KSP27 IEBO hFE VCE (sat) VBE (on) Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage VCE=30V, IE=0 VCE=40V, IE=0 VCE=50V, IE=0 VEB=10V, IB=0 VCE=5V, IC=10mA VCE=5V, IC=100mA IC=100mA, IB=0.1mA VCE=5V, IC=100mA 10K 10K 1.5 2 V V 100 100 100 100 nA nA nA nA Test Condition IC=100µA, IE=0 Min. 40 50 60 IC=100µA, IE=0 40 50 60 V V V Max. Units V V V BVCBO ICBO * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP25/26/27 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000k 10 VCE = 5V IC = 1000 IB hFE, DC CURRENT GAIN 100k V BE(sat) 1 V CE(sat) 10k 1k 1 10 100 1000 0.1 10 100 400 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 200 10k VCE = 5V IC [mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT 100 1k 100µ S 1mS 1S T C = 25 C O 10 100 T a = 25 C O 1 0.0 10 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100 VBE[V], BASE-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP25/26/27 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1