KSP42

KSP42/43 KSP42/43 High Voltage Transistor • Collector-Emitter Voltage: VCEO=KSP42: 300V KSP43: 200V • Collector Power Dissipation: PC(max)=625mW 1 TO-92 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector Base Voltage : KSP42 : KSP43 VCEO Collector-Emitter Voltage : KSP42 : KSP43 VEBO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature 300 200 6 500 625 150 -55 ~ 150 V V V mA mW °C °C 300 200 V V Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP42 : KSP43 * Collector -Emitter Breakdown Voltage : KSP42 : KSP43 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP42 : KSP43 IEBO Emitter Cut-off Current : KSP42 : KSP43 hFE * DC Current Gain VBE=6V, IC=0 VBE=4V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA IC=20mA, IB=2mA IC=20mA, IB=2mA VCB=20V, IE=0 f=1MHz VCE=20V, IC=10mA f=100MHz 50 25 40 40 0.5 0.9 3 4 V V pF pF MHz 100 100 nA nA VCB=200V, IE=0 VCB=160V, IE=0 100 100 nA nA Test Condition IC=100µA, IE=0 Min. 300 200 IC=1mA, IB=0 300 200 IE=100µA, IC=0 6 V V V Max. Units V V BVCEO BVEBO ICBO VCE (sat) VBE (sat) Cob * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Output Capacitance : KSP42 : KSP43 fT Current Gain Bandwidth Product * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP42/43 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 10 IC = 10 IB hFE, DC CURRENT GAIN VCE = 10V 1 VBE(sat) 100 0.1 V CE(sat) 10 1 10 100 0.01 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 100 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT IE = 0 f = 1MHz 120 100 Ccb [pF], CAPACITANCE VCE = 20V 80 10 60 40 20 1 0.1 0 1 10 100 1 10 100 VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Collector-Base Capacitance Figure 4. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP42/43 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1