KSP55

KSP55/56 KSP55/56 Amplifier Transistor • Collector-Emitter Voltage: VCEO=KSP55: 60V KSP56: 80V • Collector Power Dissipation: PC (max) =625mW • Complement to KSP05/06 1 TO-92 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : KSP55 : KSP56 VCEO Collector-Emitter Voltage : KSP55 : KSP56 VCEO IC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature -60 -80 -4 -500 625 150 -55 ~ 150 V V V mA mW °C °C -60 -80 V V Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter * Collector-Emitter Breakdown Voltage : KSP55 : KSP56 Emitter-Base Breakdown Voltage Collector Cut-off Current : KSP55 : KSP56 ICEO h FE VCE (sat) VBE (on) fT Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCB= -60V, IE=0 VCB= -80V, IE=0 VCE= -60V, IB=0 VCE= -1V, IC= -10mA VCE= -1V, IC= -100mA IC= -100mA, IB= -10mA VCE= -1V, IC= -100mA VCE= -2V, IC= -10mA f=100MHz 50 50 50 -0.25 -1.2 V V MHz -0.1 -0.1 -0.1 µA µA µA Test Condition IC= -1mA, IB=0 IE= -100µA, IC=0 Min. -60 -80 -4 Max. Units V V BVEBO ICBO * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP55/56 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 VCE = -1V IC = 10 IB hFE, DC CURRENT GAIN -1 V BE(sat) 100 -0.1 VCE(sat) 10 -1 -10 -100 -1000 -0.01 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage -1000 1000 VCE = -1V -100 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT VCE = -1V IC [mA], COLLECTOR CURRENT 100 -10 -1 -0.0 10 -1 -10 -100 -1000 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter On Voltage Figure 4. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSP55/56 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1