KSR1104

KSR1104

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    KSR1104 - Switching Application (Bias Resistor Built In) - Fairchild Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
KSR1104 数据手册
KSR1104 KSR1104 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47KΩ, R2=47KΩ) • Complement to KSR2104 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Marking Equivalent Circuit C R0 4 R1 B R2 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 10 100 200 150 -55 ~ 150 E Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE VCE(sat) fT Cob VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain-Bandwidth Product Output Capacitance Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10µA, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCE=10V, IC=5mA VCB=10V, IE=0 f=1.0MHz VCE=5V, IC=100µA VCE=0.3V, IC=2mA 32 0.9 47 1 0.5 3 62 1.1 250 3.7 68 0.3 V MHz pF V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A2, October 2002 KSR1104 Typical Characteristics 1000 100 VCE = 5V R1 = 47K R2 = 47K VCE =0.3V R1 = 4 7 K R2 = 4 7 K VI(on)[V], INPUT VOLTAGE hFE, DC CURRENT GAIN 10 100 1 10 1 10 100 1000 0.1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Input On Voltage 280 IC [µA], COLLECTOR CURRENT 1000 PC[mW], POWER DISSIPATION VCE = 5V R1 = 47K R2 = 47K 240 200 160 100 120 80 40 10 0.0 0 0.4 0.8 1.2 1.6 2.0 2.4 0 25 50 o 75 100 125 150 175 VI(OFF)[V], INPUT OFF VOLTAGE T a[ C], AMBIENT TEMPERATURE Figure 3. Input Off Voltage Figure 4. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A2, October 2002 KSR1104 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, October 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1
KSR1104
1. 物料型号: - 型号名称:KSR1104

2. 器件简介: - KSR1104是一种带有内置偏置电阻的开关应用(具有反相器、接口电路、驱动电路功能)的NPN外延硅晶体管。它内置了偏置电阻(R1=47KΩ,R2=47KΩ),与KSR2104互补。

3. 引脚分配: - 1. 基极(Base) - 2. 发射极(Emitter) - 3. 集电极(Collector)

4. 参数特性: - 绝对最大额定值: - 集电极-基极电压(VCBO):50V - 集电极-发射极电压(VCEO):50V - 发射极-基极电压(VEBO):10V - 集电极电流(IC):100mA - 集电极功率耗散(PC):200mW - 结温(TJ):150°C - 存储温度(TSTG):-55至150°C - 电气特性: - 集电极-基极击穿电压(BVCBO):50V - 集电极-发射极击穿电压(BVCEO):50V - 集电极截止电流(ICBO):0.1µA - DC电流增益(hFE):68 - 集电极-发射极饱和电压(VCE(sat)):0.3V - 电流增益-带宽积(fT):250MHz - 输出电容(Cob):3.7pF(在1MHz时)

5. 功能详解: - KSR1104主要应用于开关电路、反相器、接口电路和驱动电路。其内置的偏置电阻简化了电路设计,减少了外部元件的需求。

6. 应用信息: - KSR1104适用于需要小型化和低功耗的开关应用场合。

7. 封装信息: - 封装类型:SOT-23 - 尺寸:具体尺寸图见PDF文档中的“Package Dimensions SOT-23”部分。
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