KSR2009

KSR2009

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    KSR2009 - Switching Application - Fairchild Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
KSR2009 数据手册
KSR2009 KSR2009 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to KSR1009 1 TO-92 1. Emitter 2. Collector 3. Base Equivalent Circuit C R B PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -40 -5 -100 300 150 -55 ~ 150 E Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE VCE (sat) Cob fT R Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Resistor Test Condition IC= -100µA, IE=0 IC= -1mA, IB=0 VCB= -30V, IE=0 VCE= -5V, IC= -1mA IC= -10mA, IB= -1mA VCB= -10V, IE=0 f=1MHz VCE= -10V, IC= -5mA 3.2 5.5 200 4.7 6.2 100 Min. -40 -40 -0.1 600 -0.3 V pF MHz KΩ Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A2, October 2002 KSR2009 Typical Characteristics 10k -1000 VCE(sat)[mV], SATURATION VOLTAGE VCE = - 5V R = 4.7K IC = 10IB R = 4.7k hFE, DC CURRENT GAIN 1k -100 100 -10 10 -0.1 -1 -1 -10 -100 -1 -10 -100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage 400 350 PC[mW], POWER DISSIPATION 300 250 200 150 100 50 0 0 25 50 o 75 100 125 150 175 T a[ C], AMBIENT TEMPERATURE Figure 3. Power Derating ©2002 Fairchild Semiconductor Corporation Rev. A2, October 2002 KSR2009 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, October 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1
KSR2009
1. 物料型号: - 型号为KSR2009,由Fairchild Semiconductor生产。

2. 器件简介: - KSR2009是一个带有内置偏置电阻(R=4.7KΩ)的开关应用(具有偏置电阻内置)的PNP外延硅晶体管,适用于开关电路、反相器、接口电路和驱动电路,是KSR1009的补充。

3. 引脚分配: - 1. 发射极(Emitter) - 2. 集电极(Collector) - 3. 基极(Base)

4. 参数特性: - 绝对最大额定值(在未特别注明的情况下,Ta=25°C): - VCBO(集电极-基极电压):-40V - VCEO(集电极-发射极电压):-40V - VEBO(发射极-基极电压):-5V - IC(集电极电流):-100mA - PC(集电极功耗):300mW - TJ(结温):150°C - TSTG(储存温度):-55至150°C - 电气特性(在未特别注明的情况下,Ta=25°C): - BVCBO(集电极-基极击穿电压):IC=-100µA, IE=0时,最小值-40V - BVCEO(集电极-发射极击穿电压):IC=-1mA, IB=0时,最小值-40V - ICBO(集电极截止电流):VCB=-30V, IE=0时,最小值-0.1µA - hFE(直流电流增益):VCE=-5V, IC=-1mA时,100至600 - VCE(sat)(集电极-发射极饱和电压):IC=-10mA, IB=-1mA时,最小值-0.3V - Cob(输出电容):VCB=-10V, IE=0时,5.5pF(f=1MHz) - fT(电流增益带宽积):VCE=-10V, IC=-5mA时,200MHz - R(输入电阻):3.2至6.2KΩ

5. 功能详解: - KSR2009是一个PNP外延硅晶体管,具有内置偏置电阻,适用于需要开关功能的电路,如开关电路、反相器、接口电路和驱动电路。

6. 应用信息: - 该型号适用于需要PNP晶体管并希望简化电路设计的场合,通过内置偏置电阻减少外部元件数量。

7. 封装信息: - 封装类型为TO-92,具体尺寸如下(单位:毫米): - 4.58 ±0.20 - 0.46 ±0.10 - 14.47 ±0.40 - 1.27TYP [1.27 ±0.20] - 3.60 ±0.20 - 0.38 +0.10 –0.05 - 1.02 ±0.10
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