KST06

KST06

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    KST06 - Driver Transistor - Fairchild Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
KST06 数据手册
KST05/06 KST05/06 Driver Transistor • Collector-Emitter Voltage: VCEO = KST05: 60V KST06: 80V • Collector Power Dissipation: PC (max) = 350mW • Complement to KST55/56 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Parameter Collecto-Base Voltage : KST05 : KST06 VCEO Collector-Emitter Voltage : KST05 : KST06 VEBO IC PC TSTG RTH(j-a) Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Thermal Resistance junction to Ambient 60 80 4 500 350 150 357 V V V mA mW °C °C/W 60 80 V V Value Units Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCEO Parameter * Collector-Emitter Breakdown Voltage : KST05 : KST06 Emitter-Base Breakdown Voltage Collector Cut-off Current : KST05 : KST06 ICEO hFE VCE (sat) VBE (on) fT Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Test Condition IC=1mA, IB=0 IE=100µA, IC=0 VCB=60V, IE=0 VCB=80V, IE=0 VCE=60V, IB=0 VCE=1V, IC=10mA VCE=1V, IC=100mA IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=2V, IC=100mA, f=100MHz 100 50 50 0.25 1.2 V V MHz Min. 60 80 4 0.1 0.1 0.1 Max. Units V V V µA µA µA BVEBO ICBO * Pulse Test: PW≤300µs, Duty Cycle≤2% Marking Code Type Mark KST05 1H KST06 1G Marking 1H Rev. A2, November 2002 ©2002 Fairchild Semiconductor Corporation KST05/06 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1
KST06
### 物料型号 - 型号:KST05/KST06

### 器件简介 - 类型:NPN外延硅晶体管 - 用途:驱动晶体管,与KST55/56互补

### 引脚分配 - 1. Base(基极) - 2. Emitter(发射极) - 3. Collector(集电极)

### 参数特性 - 集电极-发射极电压(VCEO): - KST05:60V - KST06:80V - 集电极功耗(Pc):最大350mW - 存储温度(TSTG):150°C - 热阻(RTH(j-a)):357°C/W

### 功能详解 - 电气特性: - 集电极-发射极击穿电压(BVCEO):KST05为60V,KST06为80V - 发射极-基极击穿电压(BVEBO):4V - 集电极截止电流(CBO):KST05为0.1μA,KST06为0.1μA - 集电极截止电流(ICEO):0.1μA - 直流电流增益(hFE):最小50 - 集电极-发射极饱和电压(Vce(sat)):0.25V - 基极-发射极导通电压(VBE(on)):1.2V - 电流增益-带宽积(fT):100MHz

### 应用信息 - 该晶体管适用于需要高电压、低功耗驱动的应用场合。

### 封装信息 - 封装类型:SOT-23 - 尺寸:具体尺寸图示已提供,但未列出具体数值。
KST06 价格&库存

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