KST3906

KST3906 KST3906 General Purpose Transistor 3 2 1 SOT-23 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature 1. Base 2. Emitter 3. Collector Value -40 -40 -5 -200 350 150 Units V V V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICEX hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current * DC Current Gain Test Condition IC= -10µA, IE=0 IC= -1.0mA, IB=0 IE=10µA, IC=0 VCE= -30V, VEB= -3V VCE= -1V, IC= -0.1mA VCE= -1V, IC= -1mA VCE= -1V, IC= -10mA VCE= -1V, IC= -50mA VCE= -1V, IC= -100mA IC= -10mA, IB= -1mA IC= -50mA, IB= -5.0mA IC= -10mA, IB= -1.0mA IC= -50mA, IB= -5.0mA IC= -10mA, VCE= -20V f=100MHz VCB= -5V, IE=0, f=1.0MHz IC= -100µA, VCE= -5V RS=1KΩ f=10Hz to 15.7KHz VCC= -3V, VBE= -0.5V IC= -10mA, IB1= -1mA VCC= -3V, IC= -10mA IB1=IB2= -1mA Min. -40 -40 -5 Max. Units V V V -50 60 80 100 60 30 nA 300 VCE (sat) VBE (sat) fT Cob NF * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure -0.25 -0.4 -0.65 250 4.5 4 -0.85 -0.95 V V V V MHz pF dB tON tOFF Turn On Time Turn Off Time 70 300 ns ns * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Marking 2A ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST3906 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 VCE = -1V IC = 10 IB hFE, DC CURRENT GAIN 100 -1 VBE (sat) 10 -0.1 VCE(sat) 1 -1 -10 -100 -1000 -0.01 -0.1 -1 -10 -100 IC[A], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 1000 IE = 0 f = 1MHz fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT VCE = -20V Cob [pF], CAPACITANCE 10 100 1 0.1 -1 -10 -100 10 -0.1 -1 -10 -100 VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Output Capacitance Figure 4. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST3906 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1