KST5401

KST5401 KST5401 High Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Value -160 -150 -5 -500 350 150 Units V V V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Test Condition IC= -100µA, IE=0 IC= -1.0mA, IB=0 IE= -10µA, IC=0 VCB= -100V, IE=0 VCE= -5V, IC= -1.0mA VCE= -5V, IC= -10mA VCE= -5V, IC= -50mA IC= -10mA, IB= -1.0mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1.0mA IC= -50mA, IB= -5mA IC= -10mA, VCE= -10V f=100MHz VCB= -10V, IE=0, f=1.0MHz VCE= -5V, IC= -200µA RS=10KΩ, f=10Hz to 15.7KHz 100 50 60 50 Min. -160 -150 -5 -50 240 -0.2 -0.5 -1.0 -1.0 300 6.0 8.0 V V V V MHz pF dB Max. Units V V V nA VCE (sat) VBE (sat) fT Cob NF Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Marking 2L ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST5401 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 -10 IC = 10 IB hFE, DC CURRENT GAIN VCE = -5V -1 V BE(sat) 100 -0.1 V CE(sat) 10 -1 -10 -100 -1000 -0.01 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -1000 100 IC[mA], COLLECTOR CURRENT f = 1MHz IE = 0 -100 Cob[pF], CAPACITANCE -0.6 -0.8 -1.0 -1.2 VCE = -5V 10 -10 1 -1 -0.0 -0.2 -0.4 0.1 -1 -10 -100 VBE[V], BASE-EMITTER VOLTAGE VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 1000 VCE = -10V 100 10 1 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 KST5401 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1