MBR1045

MBR1035-MBR1060 MBR1035 - MBR1060 Features • • • • • • Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. .113(2.87) .103(2.62) .594(15.1) .587(14.91) .27(6.86) .23(5.84) .412(10.5) MAX DIA .154(3.91) .148(3.74) .185(4.70) .175(4.44) .055(1.40) .045(1.14) 1 .16(4.06) .14(3.56) 2 Dimensions are in: inches (mm) .56(14.22) .53(13.46) .11(2.79) .10(2.54) TO-220AC .037(0.94) .027(0.68) PIN 1 + 10 Ampere Schottky Barrier Rectifiers Absolute Maximum Ratings* Symbol IO if(repetitive) if(surge) PD RθJA RθJL Tstg TJ Average Rectified Current Peak Repetitive Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 135°C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Storage Temperature Range Operating Junction Temperature TA = 25°C unless otherwise noted .205(5.20) .195(4.95) PIN 2 CASE Positive + CASE .025(0.64) .014(0.35) Parameter Value 10 20 150 2.0 16.6 60 2.0 -65 to +175 -65 to +150 Units A A A W mW/°C °C/W °C/W °C °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics Parameter TA = 25°C unless otherwise noted Device 1035 1045 45 31 45 10,000 0.1 15 0.57 0.84 0.72 1.0 0.80 0.70 0.95 0.85 0.5 1050 50 35 50 1060 60 42 60 35 24 35 Units V V V V/uS mA mA V V V V A Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) Voltage Rate of Change (Rated VR) Maximum Reverse Current @ rated VR TA = 25°C TA = 125°C Maximum Forward Voltage IF = 10 A, TC = 25°C IF = 10 A, TC = 125°C IF = 20 A, TC = 25°C IF = 20 A, TC = 125°C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f = 1.0 KHz ©1999 Fairchild Semiconductor Corporation MBR1035 - MBR1060, Rev. A MBR1035-MBR1060 Schotty Barrier Rectifier (continued) Typical Characteristics Forward Current Derating Curve 12 FORWARD CURRENT (A) 10 MBR1035-MBR1045 Non-Repetitive Surge Current PEAK FORWARD SURGE CURRENT (A) 175 150 125 100 75 50 25 0.1 8 MBR1050-MBR1060 6 4 2 0 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (º C) 175 1 10 NUMBER OF CYCLES AT 60Hz 100 F orward Characteristics 50 10 REVERSE CURRENT (mA) Reverse Characteristics 20 10 MBR1035-MBR1045 T A = 125 º C FORWARD CURRENT (A) T A = 150 ºC TA = 25º C 1 MBR1035-MBR1045 MBR1050-MBR1060 TA = 7 5º C 1 MBR1050-MBR1060 0.1 MBR1035-MBR1045 0.1 Pulse Width = 300µS 2% Duty Cycle 0.01 TA = 2 5º C MBR1050-MBR1060 0.01 0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE (V) 1 1.2 0.001 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) TRANSIENT THERMAL IMPEDANCE (º C/W) Typical Junction Capacitance 5000 JUNCTION CAPACITANCE (pF) Transient Thermal Impedance 100 2000 1000 MBR1035-MBR1045 10 500 MBR1050-MBR1060 1 200 100 0.1 1 10 REVERSE VOLTAGE (V) 100 0.1 0.01 0.1 1 10 T. PULSE DURATION (sec.) 100 MBR1035 - MBR1060, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ DISCLAIMER ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.