MMBD1701/A / 1703/A / 1704/A / 1705/A
Discrete POWER & Signal Technologies
MMBD1701/A / 1703/A / 1704/A / 1705/A
3
CONNECTION DIAGRAMS
3
1
85
2
1701
3
3
1703
1
2 NC 3
1 3
2
2
1704
1705
SOT-23
1
MMBD1701 MMBD1703 MMBD1704 MMBD1705
MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A
85A 87A 88A 89A
1
2
1
2
High Conductance Low Leakage Diode
Sourced from Process 1T.
Absolute Maximum Ratings*
Symbol
W IV IO IF if if(surge) Tstg TJ Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse width = 1.0 second Storage Temperature Range Operating Junction Temperature
TA = 25°C unless otherwise noted
Parameter
Value
20 50 150 150 250 -55 to +150 150
Units
V mA mA mA mA °C °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient
Max
MMBD1701/A /1703/A-1705/A* 350 2.8 357
Units
mW mW/°C °C/W
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
©1997 Fairchild Semiconductor Corporation
MMBD1700 Rev. B
MMBD1701/A / 1703/A / 1704/A / 1705/A
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics
Symbol
BV IR VF
TA = 25°C unless otherwise noted
Parameter
Breakdown Voltage Reverse Current Forward Voltage
Test Conditions
IR = 5.0 µ A VR = 20 V IF = 10 µ A IF = 100 µ A IF = 1.0 mA IF = 10 mA IF = 20 mA IF = 50 mA VR = 0, f = 1.0 MHz IF = IR = 10 mA IRR = 1.0 mA, RL = 100Ω IF = IR = 10 mA IRR = 1.0 mA, RL = 100Ω
Min
30
Max
50
Units
V nA mV mV mV mV mV V pF pS nS
420 520 640 760 810 0.89
CO TRR
Diode Capacitance Reverse Recovery Time MMBD1701-1705 MMBD1701A-1705A
500 610 740 880 950 1.1 1.0 700 1.0
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA
VR - REVERSE VOLTAGE (V) 60
Ta= 25°C
REVERSE CURRENT vs REVERSE VOLTAGE IR - 1 to 22 V
IIR - REVERSE CURRENT (nA) R
10
Ta= 25°C
5
50
0
1
40
1
2
3 5 10 20 30 IR - REVERSE CURRENT (uA)
50
100
2 3 5 10 VR - REVERSE VOLTAGE (V)
20
GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA
V F - FORWARD VOLTAGE (mV) 600 550 500 450 400 350 300 1 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100
Ta= 25°C
FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA
V F - FORWARD VOLTAGE (mV) 850 800 750 700 650 600 550 0.1 0.2 0.3 0.5 1 23 5 I F - FORWARD CURRENT (mA) 10
Ta= 25°C
MMBD1701/A / 1703/A / 1704/A / 1705/A
High Conductance Low Leakage Diode
(continued)
Typical Characteristics
(continued)
FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 - 200 mA
V F - FORWARD VOLTAGE (V) 1.6
Ta= 25°C
CAPACITANCE vs REVERSE CURRENT VR - 0 to 15 V
1 CAPACITANCE (pF) 0.9 0.8 0.7 0.6 0.5
Ta= 25°C
1.4
1.2
1
0.8 10
20 30 50 100 I F - FORWARD CURRENT (mA)
200
0
2
4 6 8 10 REVERSE VOLTAGE (V)
12
14
P - POWER DISSIPATION (mW) D
Power Dissipation, Average Rectified Current (Io), Forward Current (I F) & Ambient Temperature (T ) A
PD - POWER DISSIPATION (mW) 250
P
D
Power Derating Curve
350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 Io - AVERAGE TEMPERATURE 175 200 DO-7 SOT-23
200
I
R
-P OW
150 100 50 0
DI -C SS ON IPA TIN OU TI ON SF OR -m WA W RD CU RR EN TIo - AVER mA AGE R
ECTIFIED CURREN T - mA
ER
0
25 50 75 100 125 150 o T A- AMBIENT TEMPERATURE ( C)
175
很抱歉,暂时无法提供与“MMBD1701”相匹配的价格&库存,您可以联系我们找货
免费人工找货