MMBFJ110_11

MMBFJ110 — N-Channel Switch April 2011 MMBFJ110 N-Channel Switch Features • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from process 58. 1 1. Drain 2. Source 3. Gate SuperSOT-3 3 2 Marking : 110 Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol VDG VGS IGF TJ TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Junction Temperature Storage Temperature Range Value 25 -25 10 150 -55 to +150 Units V V mA °C °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* TA=25°C unless otherwise noted Symbol PD Parameter Value 460 3.68 270 Units mW mW/°C °C/W Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient RθJA * Device mounted on a minimum pad. Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Conditions IG = -10μA, VDS = 0 VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, TA = 100°C VDS = 15V, ID = 10nA Min. -25 Max. Units V nA nA V mA Ω pF pF pF Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage Gate Reverse Current IGSS Gate-Source Cutoff Voltage VGS(off) On Characteristics Zero-Gate Voltage Drain Current* VDS = 15V, IGS = 0 IDSS Drain-Source On Resistance VDS ≤ 0.1V, VGS = 0 rDS(on) Small Signal Characteristics Drain-Gate &Source-Gate On VDS = 0, VGS = 0, f = 1.0MHz Cdg(on) Capacitance Csg(off) Drain-Gate Off Capacitance VDS = 0, VGS = -10V, f = 1.0MHz Cdg(off) Source-Gate Off Capacitance VDS = 0, VGS = -10V, f = 1.0MHz Csg(off) * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% -0.5 10 -3.0 -200 -4.0 18 85 15 15 © 2011 Fairchild Semiconductor Corporation MMBFJ110 Rev. A0 1 www.fairchildsemi.com MMBFJ110 — N-Channel Switch Typical Performance Characteristics Common Drain-Source 100 - DRAIN CURRENT (mA) Common Drain-Source 50 - DRAIN CURRENT (mA) T A = 25캜 °C TYP V GS(off) = - 0.7 V V GS = 0 V - 2.0 V 80 - 1.0 V - 3.0 V 40 30 60 40 20 - 5.0 V V GS = 0 V 20 10 0 - 0.1 V - 0.2 V - 0.3 V - 0.4 V - 0.5 V - 4.0 V T A = 25캜 °C TYP V GS(off) = - 5.0 V D I 0 I 0 D 0 0.4 0.8 1.2 1.6 VDS - DRAIN-SOURCE VOLTAGE (V) 2 1 2 3 4 VDS - DRAIN-SOURCE VOLTAGE (V) 5 Figure 1. Common Drain-Source Figure 2. Common Drain-Source Common Drain-Source 100 C ts (C rs ) - CAPACITANCE (pF) f = 0.1 - 1.0 MHz C iss (V DS = 5.0V) Parameter Interactions r DS - DRAIN "ON" RESISTANCE (Ω) 100 50 I DSS @ V DS = 5.0V, V GS = 0 PULSED °C r DS @ V DS = 100mV, V GS = 0 V GS(off) @ V DS = 5.0V, I D 1,000 I DSS - 500 = 3.0 nA DRAIN CURRENT (mA) 10 C rss (VDS = 0 ) r DS 10 5 I DSS 100 50 0 -4 -8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V) -20 _ 0.1 10 _ _ _ _ 0.5 1 5 10 VGS (OFF) - GATE CUTOFF VOLTAGE (V) Figure 3. Capacitance vs Gate-Source Voltage Figure 4. Parameter Interactions Normalized Drain Resistance vs Bias Voltage r DS - NORMALIZED RESISTANCE 100 50 20 10 5 2 0 0.2 0.4 0.6 0.8 1 V /VGS(off)- NORMALIZED GA TE-SOURCE VOLTAGE (V) GS 1 e n - NOISE VOLTAGE (nV / √ Hz) VGS(off) @ 5.0V, 10 μA Noise Voltage vs Frequency 100 V DG = 10V = 0.21 @ f ≥ 1.0 kHz 50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz r DS r DS = VGS ________ 1VGS(off) 10 5 I D = 1.0 mA I D = 10 mA 1 0.01 0.03 0.1 0.5 1 2 10 f - FREQUENCY (kHz) 100 Figure 5. Normalized Drain Resistance vs Bias Voltage Figure 6. Noise Voltage vs Frequency © 2011 Fairchild Semiconductor Corporation MMBFJ110 Rev. A0 2 www.fairchildsemi.com MMBFJ110 — N-Channel Switch Typical Performance Characteristics (Continued) Switching Turn-On Time vs Gate-Source Cutoff Voltage 10 t ON - TURN-ON TIME (ns) ON 8 6 4 I D = 10 mA Switching Turn-On Time vs Drain Current 50 t OFF - TURN-OFF TIME (ns) 40 30 20 10 0 TA = 25°C 캜 VDD = 1.5V V GS(off) = - 12V I D = 30 mA V GS(off) = - 8.5V V GS(off) = - 5.5V V GS(off) = - 3.5V TA = 25캜 °C VDD = 1.5V V GS(off) = - 12V 2 0 0 -2 -4 -6 -8 -10 VGS(off) - GATE-SOURCE CUTOFF VOLTAGE (V) GS(off) 0 5 10 15 20 I D - DRAIN CURRENT (mA) 25 Figure 7. Switching Turn-On Time vs Gate-Source Cutoff Voltage Figure 8. Switching Turn-On Time vs Drain Current r DS - DRAIN "ON" RESISTANCE (Ω) On Resistance vs Drain Current 100 50 V GS(off) = - 3.0V 125°C 캜 125°C 캜 V GS = 0 g os - OUTPUT CONDUCTANCE ( μ mhos) Output Conductance vs Drain Current 100 V DG = 5.0V 10V VGS(off) - 4.0V 5.0V 10V 15V 20V 15V 20V 10 5 25°C 캜 10 - 2.0V 5.0V 10V 15V 20V 25캜 °C - 55°C 캜 V GS(off) = - 5.0V - 1.0V T A = 25캜 °C f = 1.0 kHz 1 1 ID 10 - DRAIN CURRENT (mA) 100 1 0.1 1 I D - DRAIN CURRENT (mA) 10 Figure 9. On Resistance vs Drain Current Figure 10. Output Conductance vs Drain Current g fs - TRANSCONDUCTANCE (mmhos) Transconductance vs Drain Current 100 V DG = 10V f = 1.0 kHz 700 600 °C T A = 25캜 °C T A = 125캜 Power Dissipation, [mW] 10 T A = 25캜 °C T A = - 55°C 캜 500 400 300 200 100 0 0 20 40 60 80 100 120 o 10 V GS(off) = - 1.0V V GS(off) = - 3.0V V GS(off) = - 5.0V 1 0.1 ID 1 - DRAIN CURRENT (mA) 140 160 Ambient Temperature, Ta[ C] Figure 11. Transconductance vs Drain Current Figure 12. Power Dissipation vs Ambient Temperature © 2011 Fairchild Semiconductor Corporation MMBFJ110 Rev. A0 www.fairchildsemi.com 3 MMBFJ110 — N-Channel Switch Physical Dimensions SuperSOT-3 Dimensions in Millimeters © 2011 Fairchild Semiconductor Corporation MMBFJ110 Rev. A0 4 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I53 © Fairchild Semiconductor Corporation www.fairchildsemi.com