MMBFJ270 — P-Channel Switch
August 2008
MMBFJ270
P-Channel Switch
Features
• This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 88.
S D G
SOT-23
Mark : 61S
Absolute Maximum Ratings (Note1)
Symbol
VDG VGS IGF TJ, TSTG Drain-Gate Voltage Gate-Source Voltage Forward Gate Current
Ta = 25°C unless otherwise noted
Parameter
Value
-30 30 50 -55 ~ 150
Units
V V mA °C
Operating and Storage Junction Temperature Range
Note1 : These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
PD RθJA
Parameter
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient (Note2)
Value
225 1.8 556
Units
mW mW/°C °C/W
Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Electrical Characteristics
Symbol Off Characteristics
V(BR)GSS IGSS VGS(off)
TC = 25°C unless otherwise noted
Parameter
(Note3)
Test Condition
MIN
MAX
Units
Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage
(Note3)
IG = 1.0µA, VDS = 0 VGS = 20V, VDS = 0 VDS = -15V, ID = -1.0nA
30 200 0.5 2.0
V pA V
On Characteristics
IDSS gfs goss
Zero-Gate Voltage Drain Current * Forward Transferconductance
VDS = -15V, VGS = 0 VGS = 0V, VDS = 15V, f = 1.0kHz
-2.0 6000
-15 15000 200
mA µmhos µmhos
Common- Source Output Conduc- VGS = 0V, VDS = 15V, f = 1.0kHz tance
Note3 : Short duration test pulse used to minimize self-heating effect.
© 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B 1
www.fairchildsemi.com
MMBFJ270 — P-Channel Switch
Typical Characteristics
Common Drain-Source
-20 - DRAIN CURRENT (mA)
T A = 25°C TYP V GS(off) = 4.5 V
Parameter Interactions
- TRANSCONDUCTANCE (mmhos) 100 50
r DS I DSS g
fs
r
DS
1,000 500
- DRAIN "ON" RESISTANCE (Ω)
-16
V GS = 0 V
0.5 V
-12 -8
1.0 V 1.5 V 2.0 V
10 5
I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ -100 mV, VGS = 0 V GS(off) @ V DS = - 15V, I D = - 1.0 A
100 50
I
D
-4 0
2.5 V
3.0 V
3.5 V
fs
g
1
0
-1 -2 -3 -4 VDS - DRAIN-SOURCE VOLTAGE (V)
-5
1 V GS (OFF)
10 2 5 10 - GATE CUTOFF VOLTAGE (V)
Transfer Characteristics
-32 I D - DRAIN CURRENT (mA) - DRAIN CURRENT (mA)
V DS = - 15 V
V GS(off) = - 4.5 V
Transfer Characteristics
16
V DS = - 15 V
VGS(off) = - 4.5 V - 55°C 25°C 125°C VGS(off) = 2.5 V - 55°C 25°C 125°C
-24
- 55°C 25°C 125°C
12
-16
VGS(off) = 2.5 V - 55°C 25°C 125°C
8
-8
4
0
I 0 1 2 3 VGS - GATE-SOURCE VOLTAGE (V) 4 0 0
D
1 2 3 VGS - GATE-SOURCE VOLTAGE (V)
4
- NORMALIZED RESISTANCE ( Ω )
100 50 20 10 5 2 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) 1
V GS(off) @ 5.0V, 10 A
g os - OUTPUT CONDUCTANCE ( mhos)
Normalized Drain Resistance vs Bias Voltage
Output Conductance vs Drain Current
f = 1.0 kHz -5.0V -5.0V
1000
r DS r DS = V GS 1 -________ V GS(off)
100
V GS(off) = - 4.5V
-10V -20V -20V -10V
10
V GS(off) = - 2.5V
DS
_
1 0.01
r
_ _ 0.1 1 I D - DRAIN CURRENT (mA)
_
10
© 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B 2
www.fairchildsemi.com
MMBFJ270 — P-Channel Switch
Typical Characteristics (Continued)
Transconductance vs Drain Current
C is (C rs ) - CAPACITANCE (pF)
Capacitance vs Voltage
100
f = 0.1 - 1.0 MHz
g fs - TRANSCONDUCTANCE (mmhos)
10
V GS(off) = 2.5V
5
25°C V GS(off) = 6.0V
1 0.5
V DG = -15V f = 1.0 kHz
- 55°C 25°C 125°C
10 5
C is (V DS = -15V)
C rs (V DS = -15V)
0.1 _ 0.1 ID
_ 1 10 - DRAIN CURRENT (mA)
_
_
100
1
0
4 8 12 16 V GS - GATE-SOURCE VOLTAGE (V)
20
Noise Voltage vs Frequency
r DS - DRAIN "ON" RESISTANCE (Ω )
100 e n - NOISE VOLTAGE (nV / √ Hz) 50
I D = - 0.2 mA
Channel Resistance vs Temperature
1000 500
V GS(off) = 2.5V V GS(off) = 4.5V V GS(off) = 8.0V V DS = -100 mV V GS = 0
10 5
I D = 5.0 mA
100 50
V DG = - 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2f @ f ≥ 1.0 kHz
1 0.01
0.1 1 10 f - FREQUENCY (kHz)
100
10
-50 0 50 100 150 T A - AMBIENT TEMPERATURE ( o C)
Power Derating
300
250
PC[W], POWER DISSIPATION
200
150
100
50
0 0 25 50
o
75
100
125
150
175
Tc[ C], CASE TEMPERATURE
© 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B 3
www.fairchildsemi.com
MMBFJ270 — P-Channel Switch
Package Dimensions
SOT-23
0.20 MIN 2.40
±0.10
0.40 ±0.03
1.30
±0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 ±0.03 0.96~1.14 2.90 ±0.10
0.12 –0.023
+0.05
0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF
0.97REF
Dimensions in Millimeters
© 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B 4
www.fairchildsemi.com
MMBFJ270 MMBFJ270 P-Channel Switch
© 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B
www.fairchildsemi.com 5
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