MMBT2222

MMBT2222 MMBT2222 NPN General Purpose Amplifier • Sourced from process 19. C E B SOT-23 Mark: 1B Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Ratings 30 60 5.0 0.6 -55 ~ 150 Units V V V A °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE Parameter Test Condition IC = 10mA, IB = 0 IC = 10µA, IE = 0 IE = 10µA, IC = 0 VCB = 50V, IE = 0 VCB = 50V, IE = 0, Ta = 125°C VEB = 3.0V, IC = 0 IC = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V * IC = 150mA, VCE = 1.0V * IC = 500mA, VCE = 10V * IC = 150mA, IB = 15V IC = 500mA, IB = 50V IC = 150mA, IB = 15V IC = 500mA, IB = 50V 35 50 75 100 50 30 Min. 30 60 5.0 10 10 10 Max. Units V V V µA µA nA Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain On Characteristics 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage 0.4 1.6 1.3 2.6 V V ©2004 Fairchild Semiconductor Corporation Rev. B, May 2004 MMBT2222 Electrical Characteristics (Continued) Symbol Parameter Small Signal Characteristics fT Cobo Cibo td tr ts tf Curent Gain Bandwidth Product Output Capacitance Input Capacitance Delay Time Rise Time Storage Time Fall Time Ta=25°C unless otherwise noted Test Condition IC = 20mA, VCE = 20V, f = 100MHz VCB = 10V, IE = 0, f = 1MHz VEB = 0.5V, IC = 0, f = 1MHz VCC = 30V, VBE(OFF) = 0.5V, IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Min. 250 8.0 30 10 25 225 60 pF pF ns ns ns ns Max. Units Switching Characteristics * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max. 350 2.8 357 Units mW mW/°C °C/W * Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”. ©2004 Fairchild Semiconductor Corporation Rev. B, May 2004 MMBT2222 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. B, May 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2004 Fairchild Semiconductor Corporation Rev. I11