MMBT6428

MMBT6428 MMBT6428 NPN General Purpose Amplifier • This device designed for general pupose amplifier applications at collector currents to 300mA • Sourced from process 10. 3 2 1 SOT-23 Mark: 1K 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25°C unless otherwise noted Symbol VCEO VCBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Value 50 60 500 - 55 ~ 150 Units V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. Electrical Characteristics TC=25°C unless otherwise noted Symbol Off Characteristics V(BR)CEO V(BR)CBO ICEO ICBO IEBO hFE Parameter Test Condition IC = 1.0mA, IB = 0 IC = 100µA, IE = 0 VCE = 30V, IB = 0 VCB = 30V, IE = 0 VEB = 5.0V, IB = 0 VCE = 5.0V, IC = 10µA VCE = 5.0V, IC = 100µA VCE = 5.0V, IC = 1.0mA VCE = 5.0V, IC = 10mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 1.0mA VCE = 5.0V, IC = 1.0mA, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz VEB = 0.5V, IC = 0, f = 1.0MHz 0.56 100 250 250 250 250 Min. 50 60 0.1 10 10 Max. Units V V µA nA nA Collector-Emitter Breakdown Voltage * Collector-Base BreakdownVoltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain On Characteristics 650 VCE(sat) VBE(on) fT Cobo Cibo Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current gain Bandwidth Product Output Capacitance Input Capacitance 0.2 0.6 0.66 700 3.0 8.0 V V MHz pF pF Small Signal Characteristics *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% ©2002 Fairchild Semiconductor Corporation Rev. A, October 2002 MMBT6428 Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 357 Max. 350 2.8 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©2002 Fairchild Semiconductor Corporation Rev. A, October 2002 MMBT6428 Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A, October 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2002 Fairchild Semiconductor Corporation Rev. I1