MMBTH10RG

MMBTH10RG MMBTH10RG NPN RF Transistor • This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. • Sourced from process 42. C E B SOT-23 Mark: 3E 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range Ratings 40 40 4.0 50 -55 ~ 150 Units V V V mA °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE VCE(sat) fT Ccb rb’Cc Parameter Test Condition IC = 1.0 mA, IB = 0 IC = 10 µA, IE = 0 IE = 1.0 µA, IC = 0 VCB = 30 V, IE = 0 IC = 1.0 mA, VCE = 6.0 V IC = 10 mA, IB = 5.0 mA IC = 2.0 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz IC = 5.0 mA, VCB = 10 V, f = 79.8 MHz 450 0.6 12 50 Min. 40 40 4.0 100 120 0.2 Max. Units V V V nA V V MHz pF pS Collector-Emitter Sustaining Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain - Bandwidth Product Collector-Base Capacitance Collector Base Time Constant On Characteristics Small Signal Characteristics * Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max. 225 1.8 556 Units mW mW/°C °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." ©2004 Fairchild Semiconductor Corporation Rev. A, April 2004 MMBTH10RG Package Dimensions SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2004 Fairchild Semiconductor Corporation Rev. I10