MMPQ3467

TN3467A / MMPQ3467 Discrete POWER & Signal Technologies TN3467A MMPQ3467 E B E B E B E B C TO-226 B E SOIC-16 C C C C C C C C PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 40 5.0 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Effective 4 Die Each Die TN3467A 1.0 8.0 50 125 Max MMPQ3467 1.0 8.0 Units W mW/ °C °C/W °C/W °C/W °C/W 125 240 © 1997 Fairchild Semiconductor Corporation TN3467A / MMPQ3467 PNP Switching Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX ICBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base-Cutoff Current Collector-Cutoff Current Collector-Cutoff Current I C = 10 mA, IB = 0 I C = 10 µ A, IE = 0 I E = 10 µA, I C = 0 VCE = 30 V, VBE = 3.0 V VCE = 30 V, VBE = 3.0 V VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150° C 40 40 5.0 120 100 0.01 15 V V V nA nA µA µA ON CHARACTERISTICS* hFE DC Current Gain I C = 150 mA, VCE = 1.0 V I C = 500 mA, VCE = 1.0 V I C = 1.0 A, VCE = 5.0 V I C = 150 mA, IB = 15 mA I C = 500 mA, IB = 50 mA I C = 1.0 A, IB = 100 mA I C = 150 mA, IB = 15 mA I C = 500 mA, IB = 50 mA I C = 1.0 A, IB = 100 mA 40 40 40 120 0.3 0.5 1.0 1.0 1.2 1.6 V V V V V V VCE(sat ) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage 0.8 SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo Current Gain-Bandwidth Product Output Capacitance Input Capacitance I C = 50 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 KHz VBE = 0.5 V, IC = 0, f = 1.0 KHz 175 25 100 MHz pF pF SWITCHING CHARACTERISTICS (except for MMPQ3467) td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 30 V, VBE = 2.0 V, I C = 500 mA, IB1 = 50 mA VCC = 30 V, IC = 500 mA, I B1 = IB2 = 50 mA 10 30 60 30 ns ns ns ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% TN3467A / MMPQ3467 PNP Switching Transistor (continued) DC Typical Characteristics VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 140 120 100 80 60 40 20 0 0.01 IC 0.1 - COLLECTOR CURRENT (A) P0 Collector-Emitter Saturation Voltage vs Collector Current 0.4 β = 10 0.3 25 °C VCE = 1V 1 25 ºC 25 °C - 40 ºC 0.2 125 ºC - 40 ºC 0.1 1 0 10 100 300 I C - COLLECTOR CURRENT (mA) P0 500 1 0.8 0.6 0.4 0.2 10 IC 100 - COLLECTOR CURRENT (mA) P0 VBE(ON) BASE-EMITTER ON VOLTAGE (V) - VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current Base-Emitter ON Voltage vs Collector Current 1 V CE = 5V - 40 ºC 25 °C - 40 ºC 25 °C 0.8 125 ºC β = 10 0.6 125 ºC 1000 0.4 10 100 I C - COLLECTOR CURRENT (mA) P0 300 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 6000 V CB = 30V 1000 100 10 1 25 50 75 100 125 T A - AMBIENT TEMPERATURE (ºC) 150 TN3467A / MMPQ3467 PNP Switching Transistor (continued) AC Typical Characteristics Input / Output Capacitance vs. Reverse Bias Voltage Switching Times vs. Collector Current Switching Times vs. Ambient Temperature Delay Time vs. Turn On Base Current and Reverse Bias Emitter Voltage Rise Time vs. Collector Current and Turn On Base Current Turn On / Turn Off Times vs. Collector Current TN3467A / MMPQ3467 PNP Switching Transistor (continued) AC Typical Characteristics (continued) Fall Time vs. Turn On and Turn Off Base Currents Fall Time vs. Turn On and Turn Off Base Currents Storage Time vs. Turn On and Turn Off Base Currents Storage Time vs. Turn On and Turn Off Base Currents TN3467A / MMPQ3467 PNP Switching Transistor (continued) AC Typical Characteristics (continued) f T - GAIN BANDWIDTH PRODUCT (MHz) Gain Bandwidth Product vs Collector Current 350 300 250 200 150 100 50 0 1 10 20 P 70 50 100 200 500 POWER DISSIPATION vs AMBIENT TEMPERATURE 1 PD - POWER DISSIPATION (W) Vce = 5V 0.75 TO-226 SOT-223 0.5 0.25 0 0 25 IC - COLLECTOR CURRENT (mA) 50 75 100 o TEMPERATURE ( C) 125 150 Test Circuits - 30 V PW = 200 ns Rise Time ≤ 2.0 ns Duty Cycle = 2 % 2.0 V 0 200 Ω 59 Ω Scope - 10.8 V FIGURE 1: tON Equivalent Test Circuit 2.0 < t1 < 500 µs t3 > 1.0 µs Duty Cycle = 2% 0 200 Ω - 11.2 V t1 t2 t3 3.0 V 1N916 Scope 59 Ω t < 5 ns 2 8.8 V - 30 V FIGURE 2: tOFF Equivalent Test Circuit