MMPQ3725

TN3725A / MMPQ3725 Discrete POWER & Signal Technologies TN3725A MMPQ3725 E B E B E B E B C TO-226 BE SOIC-16 C C C C C C C C NPN Switching Transistor This device is designed for high speed core driver applications up to collector currents of 1.0 A. Sourced from Process 25. Absolute Maximum Ratings Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 60 6.0 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25° C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Effective 4 Die Each Die TN3725A 1.0 8.0 50 125 Max MMPQ3725 1.0 8.0 Units W mW/ °C °C/W °C/W °C/W °C/W 125 240 © 1997 Fairchild Semiconductor Corporation TN3725A / MMPQ3725 NPN Switching Transistor (continued) Electrical Characteristics Symbol Parameter TA= 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO ICES Collector-Emitter Breakdown Voltage* Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current I C = 10 mA, IB = 0 I C = 10 µ A, VBE = 0 I C = 10 µ A, ICE = 0 I E = 10 µ A, IC = 0 VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 100°C VCE = 80 V, VEB = 0 40 60 60 6.0 1.7 120 10 V V V V µA µA µA ON CHARACTERISTICS* hFE DC Current Gain IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC =100mA,VCE =1.0V,TA = - 55° C IC = 300 mA, VCE = 1.0 V IC = 500 mA, VCE = 1.0 V IC =500mA,VCE =1.0V,TA = - 55° C IC = 800 mA, VCE = 2.0 V IC = 1.0 A, VCE = 5.0 V IC = 10 mA, IB = 1.0 mA IC = 100 mA, I B = 10 mA IC = 300 mA, I B = 30 mA IC = 500 mA, I B = 50 mA IC = 800 mA, I B = 80 mA IC = 1.0 A, I B = 100 mA IC = 10 mA, IB = 1.0 mA IC = 100 mA, I B = 10 mA IC = 300 mA, I B = 30 mA IC = 500 mA, I B = 50 mA IC = 800 mA, I B = 80 mA IC = 1.0 A, I B = 100 mA 30 60 30 40 35 20 20 25 150 VCE( sat) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage 0.25 0.26 0.4 0.52 0.8 0.95 0.76 0.86 1.1 1.2 1.5 1.7 V V V V V V V V V V V V SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo Current Gain - Bandwidth Product Output Capacitance Input Capacitance I C = 50 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz 300 10 55 MHz pF pF SWITCHING CHARACTERISTICS (except MMPQ3725) ton td tr toff ts tf Turn-on Time Delay Time Rise Time Turn-off Time Storage Time Fall Time VCC = 30 V, IC = 500 mA I B1 = IB2 = 50 mA VCC = 30 V, VBE( off ) = 3.8 V, I C = 500 mA, IB1 = 50 mA 35 10 30 60 50 30 ns ns ns ns ns ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0% TN3725A / MMPQ3725 NPN Switching Transistor (continued) DC Typical Characteristics VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 200 VCE = 1V 150 125 ºC Collector-Emitter Saturation Voltage vs Collector Current 0.8 β = 10 0.6 25 °C 100 25 °C 0.4 125 ºC 50 - 40 ºC 0.2 1 - 40 ºC 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) P2 1 10 100 I C - COLLECTOR CURRENT (mA) P 25 1000 1.2 1 0.8 0.6 0.4 0.2 0 1 IC 10 100 - COLLECTOR CURRENT (mA) 1000 - 40 ºC 25 °C 125 º C VBE(ON) BASE-EMITTER ON VOLTAGE (V) - VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current Base-Emitter ON Voltage vs Collector Current 0.8 - 40 ºC 0.6 25 °C β = 10 0.4 125 ºC VCE = 1V 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) P2 25 Collector-Cutoff Current vs Ambient Temperature I CBO- COLLECTOR CURRENT (uA) 100 10 1 0.1 VCB = 40V 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( ºC) P 25 150 TN3725A / MMPQ3725 NPN Switching Transistor (continued) AC Typical Characteristics Input/Output Capacitance vs. Reverse Bias Contours of Constant Bandwidth Product (fT) Switching Time vs. Collector Current Turn On / Turn Off Times vs. Collector Current Switching Times vs. Ambient Temperature Delay Time vs. Turn On Base Current and Reverse Base-Emitter Voltage TN3725A / MMPQ3725 NPN Switching Transistor (continued) AC Typical Characteristics (continued) Rise Time vs. Collector and Turn On Base Currents Storage Time vs. Turn On and Turn Off Base Currents Storage Time vs. Turn On and Turn Off Base Currents Storage Time vs. Turn On and Turn Off Base Currents Fall Time vs. Turn On and Turn Off Base Currents TN3725A / MMPQ3725 NPN Switching Transistor (continued) AC Typical Characteristics (continued) Fall Time vs. Turn On and Turn Off Base Currents Fall Time vs. Turn On and Turn Off Base Currents POWER DISSIPATION vs AMBIENT TEMPERATURE 1 PD - POWER DISSIPATION (W) 0.75 TO-226 SOT-223 0.5 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 Test Circuit 3.8 V 30 V VIN = 9.7 V tr and tf ≤ 1 ns PW = 1.0 µs ZIN = 50 Ω Duty Cycle < 2% 10 µF VIN 1.0 KΩ 15 Ω VOUT 1.0 µF 43 Ω 100 Ω 62 Ω To sampling scope tr < 1.0 ns ZIN ≥ 100 K Ω FIGURE 1: Switching Time Test Circuit (IC = 500 mA, IB1 = 50 mA, IB2 = 50 mA)