MMPQ3904

FFB3904 / FMB3904 / MMPQ3904 FFB3904 E2 B2 C1 FMB3904 C2 E1 C1 E1 MMPQ3904 E2 B2 E3 B3 E4 B4 B1 SC70-6 Mark: .1A pin #1 C2 B1 E1 pin #1 B1 B2 E2 C2 C1 C3 C2 C4 C4 C3 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. SuperSOT-6 Mark: .1A Dot denotes pin #1 SOIC-16 Mark: MMPQ3904 pin #1 C1 NPN Multi-Chip General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 60 6.0 200 -55 to +150 Units V V V mA °C 4 Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB3904 300 2.4 415 Max FMB3904 700 5.6 180 MMPQ3904 1,000 8.0 125 240 Units mW mW/°C °C/W °C/W °C/W  1 998 Fairchild Semiconductor Corporation FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 µA, IE = 0 IE = 10 µA, IC = 0 VCE = 30 V, VEB = 0 VCE = 30 V, VEB = 0 40 60 6.0 50 50 V V V nA nA ON CHARACTERISTICS* hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V MMPQ3904 IC = 1.0 mA, VCE = 1.0 V MMPQ3904 IC = 10 mA, VCE = 1.0 V MMPQ3904 IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 40 30 70 50 100 75 60 30 300 VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 0.65 0.2 0.3 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS fT Cobo Cibo Current Gain - Bandwidth Product Output Capacitance Input Capacitance (MMPQ3904 only) IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 140 kHz VEB = 0.5 V, IC = 0, f = 140 kHz 250 4.0 8.0 MHz pF pF *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier (continued) Typical Characteristics 500 400 125 °C V CE = 5V VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 0.15 β = 10 125 °C 300 25 °C 0.1 25 °C 200 100 0 0.1 - 40 °C 0.05 - 40 °C 1 10 I C - COLLECTOR CURRENT (mA) 100 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 V BE(ON) BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 β = 10 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 °C 25 °C 0.8 - 40 °C 25 °C 0.6 125 °C 0.6 125 °C 0.4 4 100 0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 500 CAPACITANCE (pF) 10 Capacitance vs Reverse Bias Voltage f = 1.0 MHz 100 10 1 0.1 VCB = 30V 5 4 3 2 C obo C ibo 25 50 75 100 125 TA - AMBIENT TEMPERATURE ( °C) 150 1 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier (continued) Typical Characteristics (continued) Noise Figure vs Frequency 12 NF - NOISE FIGURE (dB) 10 8 6 4 2 0 0.1 I C = 100 µ A, R S = 500 Ω Noise Figure vs Source Resistance 12 NF - NOISE FIGURE (dB) I C = 1.0 mA I C = 1.0 mA R S = 200Ω I C = 50 µA R S = 1.0 kΩ I C = 0.5 mA R S = 200Ω V CE = 5.0V 10 I C = 5.0 mA 8 6 4 2 0 0.1 I C = 50 µA I C = 100 µA 1 10 f - FREQUENCY (kHz) 100 1 10 R S - SOURCE RESISTANCE ( kΩ ) 100 Current Gain and Phase Angle vs Frequency 50 45 40 35 30 25 20 15 10 5 0 PD - POWE R DIS SIPATION (W) h fe Power Dissipation vs Ambient Temperature 0 20 40 60 80 100 120 140 160 180 1000 1 - CURRENT GAIN (dB) SOIC-16 0.75 SOT-6 θ - DEGREES θ 0.5 SC70 -6 0.25 h V CE = 40V I C = 10 mA 1 10 100 f - FREQUENCY (MHz) fe 0 0 25 50 75 100 TE MPE RATURE (°C) 125 150 Turn-On Time vs Collector Current 500 I B1 = I B2 = 40V TIME (nS) 100 15V t r @ V CC = 3.0V 2.0V 10 t d @ VCB = 0V 5 1 10 I C - COLLECTOR CURRENT (mA) 100 Ic 10 Rise Time vs Collector Current 500 VCC = 40V t r - RISE TIME (ns) I B1 = I B2 = Ic 10 100 T J = 125°C T J = 25°C 10 5 1 10 I C - COLLECTOR CURRENT (mA) 100 FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier (continued) Typical Characteristics (continued) Storage Time vs Collector Current 500 t S - STORAGE TIME (ns) T J = 25°C Fall Time vs Collector Current 500 I B1 = I B2 = t f - FALL TIME (ns) T J = 125°C Ic 10 I B1 = I B2 = Ic 10 VCC = 40V 100 T J = 125°C 100 T J = 25°C 10 5 1 10 I C - COLLECTOR CURRENT (mA) 100 10 5 1 10 I C - COLLECTOR CURRENT (mA) 100 Current Gain V CE = 10 V f = 1.0 kHz T A = 25oC h oe - OUTPUT ADMITTANCE (µ mhos) 500 100 Output Admittance V CE = 10 V f = 1.0 kHz T A = 25oC h fe - CURRENT GAIN 100 10 4 1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 100 h ie - INPUT IMPEDANCE (kΩ ) h re - VOLTAGE FE EDBACK RATIO (x10 4 ) Input Impedance V CE = 10 V f = 1.0 kHz T A = 25oC Voltage Feedback Ratio 10 7 5 4 3 2 V CE = 10 V f = 1 .0 kHz T A = 25oC 10 1 0.1 0.1 _ 1 I C - COLLECTOR CURRENT (mA) 10 1 0.1 1 I C - COLLE CTOR CURRENT (mA) 10 FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier (continued) Test Circuits 3.0 V 300 ns 10.6 V Duty Cycle = 2% 0 - 0.5 V < 1.0 ns 10 KΩ 275 Ω C1 < 4.0 pF FIGURE 1: Delay and Rise Time Equivalent Test Circuit 3.0 V 10 < t1 < 500 µs t1 10.9 V 275 Ω Duty Cycle = 2% 0 10 KΩ C1 < 4.0 pF - 9.1 V < 1.0 ns 1N916 FIGURE 2: Storage and Fall Time Equivalent Test Circuit TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G