MOC212-M

SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through - the - board mounting. MOC212-M MOC213-M FEATURES • UL Recognized (File #E90700, volume 2) • VDE Recognized (File #136616) (add option ‘V’ for VDE approval, e.g., MOC211V-M) • Convenient Plastic SOIC-8 Surface Mountable Package Style • Standard SOIC-8 Footprint, with 0.050" Lead Spacing • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • High Input-Output Isolation of 2500 VAC(rms) Guaranteed • Minimum BVCEO of 30V guaranteed CATHODE 2 7 BASE ANODE 1 8 N/C APPLICATIONS • General Purpose Switching Circuits • Interfacing and coupling systems of different potentials and impedances • Regulation Feedback Circuits • Monitor and Detection Circuits N/C 3 6 COLLECTOR N/C 4 5 EMITTER © 2005 Fairchild Semiconductor Corporation Page 1 of 10 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise specified) Rating EMITTER Forward Current - Continuous Forward Current - Peak (PW = 100 µs, 120 pps) Reverse Voltage LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage Emitter-Collector Voltage Collector-Base Voltage Collector Current-Continuous Detector Power Dissipation @ TA = 25°C Derate above 25°C TOTAL DEVICE Input-Output Isolation Voltage (1,2,3) (f = 60 Hz, t = 1 min.) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range Storage Temperature Range Lead Soldering Temperature (1/16" from case, 10 sec. duration) VISO PD TA Tstg TL 2500 250 2.94 -40 to +100 -40 to +150 260 Vac(rms) mW mW/°C °C °C °C VCEO VECO VCBO IC PD 30 7.0 70 150 150 1.76 V V V mA mW mW/°C IF IF (pk) VR PD 60 1.0 6.0 90 0.8 mA A V mW mW/°C Symbol Value Unit © 2005 Fairchild Semiconductor Corporation Page 2 of 10 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified) Parameter EMITTER Input Forward Voltage Reverse Leakage Current Input Capacitance DETECTOR Collector-Emitter Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Capacitance COUPLED Collector-Output Current(4) MOC211-M MOC212-M MOC213-M (IF = 10 mA, VCE = 10 V) f = (60 Hz AC Peak, t = 1 min.) (V = 500 V) (IC = 2.0 mA, IF = 10 mA) (V = 0 V, f = 1 MHz) (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) (Fig. 6) (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) (Fig. 6) (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) (Fig. 6) (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω) (Fig. 6) CTR VISO RISO VCE (sat) CISO ton toff tr tf 20 50 100 2500 1011 — — — — — — — — — — — — 0.2 7.5 5.7 3.2 4.7 — — — — — 0.4 — — — — — % Vac(rms) Ω V pF µs µs µs µs (VCE = 10 V, TA = 25°C) (VCE = 10 V, TA = 100°C) (IC = 100 µA) (IE = 100 µA) (f = 1.0 MHz, VCE = 0) ICEO1 ICEO2 BVCEO BVECO CCE — — 30 7.0 — 1.0 1.0 100 10 7.0 50 — — — — nA µA V V pF (IF = 10 mA) (VR = 6.0 V) VF IR CIN — — — 1.15 0.001 18 1.5 100 — V µA pF Test Conditions Symbol Min Typ** Max Unit Isolation Surge Voltage(1,2,3) Isolation Resistance(2) Collector-Emitter Saturation Voltage Isolation Capacitance(2) Turn-On Time Turn-Off Time Rise Time Fall Time ** Typical values at TA = 25°C 1. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common. 3. VISO rating of 2500 VAC(rms) for t = 1 min. is equivalent to a rating of 3,000 VAC(rms) for t = 1 sec. 4. Current Transfer Ratio (CTR) = IC/IF x 100%. © 2005 Fairchild Semiconductor Corporation Page 3 of 10 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M 1.8 MOC212-M 10 MOC213-M Fig. 2 Output Curent vs. Input Current Fig. 1 LED Forward Voltage vs. Forward Current I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) 1.7 VF - FORWARD VOLTAGE (V) 1.6 1.5 1 VCE = 5V NORMALIZED TO IF = 10mA 1.4 TA = –55°C 1.3 TA = 25°C TA = 100°C 1.2 0.1 1.1 1.0 1 10 100 IF - LED FORWARD CURRENT (mA) 0 .01 0.1 1 10 100 Fig. 3 Output Current vs. Ambient Temperature 10 IF - LED INPUT CURRENT (mA) Fig. 4 Output Current vs. Collector - Emitter Voltage I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) 1.6 I C - O UTPUT COLLECTOR CURRENT (NORMALIZED) 1.4 1.2 1.0 1 0.8 0.6 0.4 0.2 I F = 10mA NORMALIZED TO VCE = 5V 0.0 0 1 2 3 4 5 6 7 8 9 10 NORMALIZED TO TA = 25 °C 0.1 -80 -60 -40 -20 0 20 40 60 80 100 120 TA - AMBIENT TEMPERATURE ( °C) VCE - COLLECTOR -EMITTER VOLTAGE (V) Fig. 5 Dark Current vs. Ambient Temperature 10000 1.0 0.9 VCE=10V Fig. 6 CTR vs. RBE (Unsaturated) I CEO - COLLECTOR -EMITTER DARK CURRENT (nA) IF = 20mA 0.8 0.7 0.6 0.5 1000 IF = 10mA 100 NORMALIZED CTR IF = 5mA 0.4 0.3 0.2 10 1 0.1 0.0 10 VCE = 5V, TA = 25°C Normalized to: CTR at RBE = Open 100 100 0 0.1 0 20 40 60 80 100 RBE - BASE RESISTANCE (kΩ) TA - AMBIENT TEMPERATURE (°C) © 2005 Fairchild Semiconductor Corporation Page 4 of 10 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M Fig. 7 CTR vs. RBE (Saturated) 1.0 0.9 3.5 4.0 VCC = 10V IC = 2mA RL = 100 NORMALIZED TO : ton AT RBE = OPEN MOC212-M MOC213-M Fig. 8 Normalized ton vs. RBE 0.8 IF = 20mA 3.0 NORMALIZED CTR 0.7 0.6 0.5 IF = 5mA 0.4 0.3 0.2 0.1 0.0 10 VCE = 0.3V, TA = 25°C Normalized to: CTR at RBE = Open 100 1000 0.5 IF = 10mA NORMALIZED ton 2.5 2.0 1.5 1.0 0.0 0.01 0.1 1 10 100 RBE - BASE RESISTANCE (kΩ) RBE - BASE RESISTANCE (MΩ) Fig. 9 Normalized tof vs. RBE 1.6 1.4 1.2 VCC = 10V IC = 2mA RL = 100 NORMALIZED TO : tof AT RBE = OPEN f NORMALIZED tof f 1.0 0.8 0.6 0.4 0.2 0.0 0.01 0.1 1 10 100 RBE - BASE RESISTANCE (MΩ) © 2005 Fairchild Semiconductor Corporation Page 5 of 10 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M TEST CIRCUIT VCC = 10V INPUT PULSE MOC212-M MOC213-M WAVE FORMS IF INPUT RBE IC RL 10% 90% tr ton Adjust IF to produce IC = 2 mA tf toff OUTPUT PULSE OUTPUT Figure 6. Switching Time Test Circuit and Waveforms © 2005 Fairchild Semiconductor Corporation Page 6 of 10 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M 8-Pin Small Outline Package Dimensions (Surface Mount) 0.024 (0.61) 0.164 (4.16) 0.144 (3.66) SEATING PLANE 0.060 (1.52) 0.202 (5.13) 0.182 (4.63) 0.275 (6.99) 0.155 (3.94) 0.010 (0.25) 0.006 (0.16) 0.143 (3.63) 0.123 (3.13) 0.021 (0.53) 0.011 (0.28) 0.008 (0.20) 0.003 (0.08) 0.050 (1.27) TYP 0.244 (6.19) 0.224 (5.69) 0.050 (1.27) Lead Coplanarity : 0.004 (0.10) MAX © 2005 Fairchild Semiconductor Corporation Page 7 of 10 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M ORDERING INFORMATION Option V R1 R1V R2 R2V Order Entry Identifier V R1 R1V R2 R2V Description VDE 0884 Tape and reel (500 units per reel) VDE 0884, Tape and reel (500 units per reel) Tape and reel (2500 units per reel) VDE 0884, Tape and reel (2500 units per reel) MOC212-M MOC213-M QT Carrier Tape Specifications 8.0 ± 0.10 3.50 ± 0.20 0.30 MAX 4.0 ± 0.10 2.0 ± 0.05 Ø1.5 MIN 1.75 ± 0.10 5.5 ± 0.05 8.3 ± 0.10 12.0 ± 0.3 5.20 ± 0.20 0.1 MAX 6.40 ± 0.20 Ø1.5 ± 0.1/-0 User Direction of Feed © 2005 Fairchild Semiconductor Corporation Page 8 of 10 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M Reflow Profile MOC212-M MOC213-M 300 280 260 240 220 200 180 Time above 183°C = 90 Sec 260°C >245°C = 42 Sec °C 160 140 120 100 80 60 40 20 0 0 60 120 180 33 Sec 1.822°C/Sec Ramp up rate 270 360 Time (s) © 2005 Fairchild Semiconductor Corporation Page 9 of 10 6/15/05 SMALL OUTLINE OPTOCOUPLERS TRANSISTOR OUTPUT MOC211-M MOC212-M MOC213-M DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. © 2005 Fairchild Semiconductor Corporation Page 10 of 10 6/15/05