MOC215

SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M DESCRIPTION These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high density applications, and eliminate the need for through–the–board mounting. MOC216-M MOC217-M FEATURES • UL Recognized (File #E90700, Volume 2) • VDE Recognized (File #13616) (add option “V” for VDE approval, i.e., MOC215V-M) • Convenient Plastic SOIC–8 Surface Mountable Package Style • Low LED Input Current Required, for Easier Logic Interfacing • Standard SOIC–8 Footprint, with 0.050” Lead Spacing • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • High Input–Output Isolation of 2500 Vac (rms) Guaranteed CATHODE 2 7 BASE ANODE 1 8 N/C APPLICATIONS • Low power Logic Circuits • Interfacing and coupling systems of different potentials and impedances • Telecommunications equipment • Portable electronics N/C 3 6 COLLECTOR N/C 4 5 EMITTER Marking Information: • MOC215-M = 215 • MOC216-M = 216 • MOC217-M = 217 © 2002 Fairchild Semiconductor Corporation Page 1 of 9 4/10/03 SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M MOC216-M MOC217-M ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise specified) Rating EMITTER Forward Current - Continuous Forward Current - Peak (PW = 100 µs, 120 pps) Reverse Voltage LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage Collector-Base Voltage Emitter-Collector Voltage Collector Current-Continuous Detector Power Dissipation @ TA = 25°C Derate above 25°C TOTAL DEVICE Input-Output Isolation Voltage(1,2) (60 Hz, 1 minute duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range Storage Temperature Range VISO PD TA Tstg 2500 250 2.94 -40 to +100 -40 to +125 Vac(rms) mW mW/°C °C °C VCEO VCBO VECO IC PD 30 70 7.0 150 150 1.76 V V V mA mW mW/°C IF IF (pk) VR PD 60 1.0 6.0 90 0.8 mA A V mW mW/°C Symbol Value Unit © 2002 Fairchild Semiconductor Corporation Page 2 of 9 4/10/03 SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M MOC216-M MOC217-M ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified) Characteristic EMITTER Forward Voltage Reverse Leakage Current Capacitance DETECTOR Collector-Emitter Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Capacitance COUPLED Output Collector Current(4) MOC215-M MOC216-M MOC217-M (IF = 1.0 mA, VCE = 5.0 V) (IC = 100µA, IF = 1.0mA) (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω, fig. 10) (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω, fig. 10) (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω, fig. 10) (IC = 2.0 mA, VCC = 10 V, RL = 100 Ω, fig. 10) (f = 60 Hz, t = 1.0 min.) (VI-O = 500 V) (VI-O = 0, f = 1.0 MHz) CTR VCE(sat) ton toff tr tf VISO RISO CISO 20 50 100 — — — — — 2500 1011 — — — — — 4.0 4.0 3.0 3.0 — — 0.2 — — — 0.4 — — — — — — — % V µs µs µs µs Vac(rms) Ω pF (VCE = 5.0 V, TA = 25°C) (VCE = 5.0 V, TA = 100°C) (IC = 100 µA) (IE = 100 µA) (f = 1.0 MHz, VCE = 0) ICEO BVCEO BVECO CCE — — 30 7.0 — 1.0 1.0 100 10 7.0 50 — — — — nA µA V V pF (IF = 1.0 mA) (VR = 6.0 V) VF IR C — — — 1.07 0.001 18 1.3 100 — V µA pF Symbol Min Typ** Max Unit Collector-Emitter Saturation Voltage Turn-On Time Turn-Off Time Rise Time Fall Time Input-Output Isolation Voltage(1,2,3) Isolation Resistance(2) Isolation Capacitance(2) ** Typical values at TA = 25°C unless otherwise noted. 1. Input-Output Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, Pins 1 and 2 are common and Pins 5, 6 and 7 are common. 3. VISO rating of 2,500 VAC(RMS) for t = 1 minute is equivalent to a rating of 3,000 VAC(RMS) for t = 1 second. 4. Current Transfer Ratio (CTR) = IC/IF x 100%. © 2002 Fairchild Semiconductor Corporation Page 3 of 9 4/10/03 SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M 1.8 MOC216-M 10 MOC217-M Fig. 2 Output Curent vs. Input Current Fig. 1 LED Forward Voltage vs. Forward Current I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) 1.7 VF - FORWARD VOLTAGE (V) 1.6 1.5 1 VCE = 5V NORMALIZED TO IF = 10mA 1.4 TA = 55°C 1.3 TA = 25°C TA = 100°C 1.2 0.1 1.1 1.0 1 10 100 IF - LED FORWARD CURRENT (mA) 0 .01 0.1 1 10 100 Fig. 3 Output Current vs. Ambient Temperature 10 IF - LED INPUT CURRENT (mA) Fig. 4 Output Current vs. Collector - Emitter Voltage I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) 1.6 I C - O UTPUT COLLECTOR CURRENT (NORMALIZED) 1.4 1.2 1.0 1 0.8 0.6 0.4 0.2 I F = 10mA NORMALIZED TO VCE = 5V 0.0 0 1 2 3 4 5 6 7 8 9 10 NORMALIZED TO TA = 25 o C 0.1 -80 -60 -40 -20 0 20 40 60 o 80 100 120 TA - AMBIENT TEMPERATURE ( C) VCE - COLLECTOR -EMITTER VOLTAGE (V) Fig. 5 Dark Current vs. Ambient Temperature 10000 4.0 Fig. 6 Normalized ton vs. RBE VCC = 10V IC = 2mA RL = 100Ω Normalized to: ton at RBE = Open I CEO - COLLECTOR -EMITTER DARK CURRENT (nA) 3.5 1000 VCE=10V 3.0 2.5 NORMALIZED ton 0 20 40 60 80 100 100 2.0 10 1.5 1.0 1 0.5 0.1 0.0 0.01 0.1 1 10 100 © 2002 Fairchild Semiconductor Corporation Page 4 of 9 4/10/03 SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M 1.6 VCC = 10V IC = 2mA RL = 100Ω Normalized to: toff at RBE = Open MOC216-M Fig. 7 Normalized toff vs. RBE 1.0 0.9 IF = 10mA MOC217-M Fig. 8 CTR vs. RBE (Saturated) 1.4 0.8 0.7 1.2 NORMALIZED CTR NORMALIZED toff 1.0 0.6 0.5 IF = 20mA IF = 5mA 0.8 0.6 0.4 0.3 0.4 0.2 0.2 0.1 0.0 0.01 0.1 1 10 100 0.0 10 VCE = 0.3V, TA = 25°C Normalized to: CTR at RBE = Open 100 1000 RBE - BASE RESISTANCE (MΩ) RBE - BASE RESISTANCE (kΩ) Fig. 9 CTR vs. RBE (Unsaturated) 1.0 0.9 0.8 IF = 10mA 0.7 NORMALIZED CTR 0.6 0.5 IF = 20mA IF = 5mA 0.4 0.3 0.2 VCE = 5V, TA = 25°C Normalized to: CTR at RBE = Open 10 100 1000 0.1 0.0 RBE - BASE RESISTANCE (kΩ) © 2002 Fairchild Semiconductor Corporation Page 5 of 9 4/10/03 SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M TEST CIRCUIT VCC = 10V INPUT PULSE MOC216-M WAVE FORMS MOC217-M IF INPUT R BE IC RL 10% 90% tr t on Adjust I F to produce IC = 2 mA OUTPUT PULSE tf t off OUTPUT Figure 10. Switching Time Test Circuit and Waveforms Package Dimensions (Surface Mount) 8-Pin Small Outline 0.024 (0.61) 0.164 (4.16) 0.144 (3.66) SEATING PLANE 0.060 (1.52) 0.202 (5.13) 0.182 (4.63) 0.275 (6.99) 0.155 (3.94) 0.010 (0.25) 0.006 (0.16) 0.143 (3.63) 0.123 (3.13) 0.021 (0.53) 0.011 (0.28) 0.008 (0.20) 0.003 (0.08) 0.050 (1.27) TYP 0.244 (6.19) 0.224 (5.69) 0.050 (1.27) Lead Coplanarity : 0.004 (0.10) MAX © 2002 Fairchild Semiconductor Corporation Page 6 of 9 4/10/03 SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M ORDERING INFORMATION Order Entry Identifier V R1 R1V R2 R2V MOC216-M MOC217-M Option V R1 R1V R2 R2V Description VDE 0084 Tape and reel (500 units per reel) VDE 0884, Tape and reel (500 units per reel) Tape and reel (2500 units per reel) VDE 0884, Tape and reel (2500 units per reel) MARKING INFORMATION 1 215 V X YY S 2 6 3 4 5 Definitions 1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) One digit year code, e.g., ‘3’ Two digit work week ranging from ‘01’ to ‘53’ Assembly package code © 2002 Fairchild Semiconductor Corporation Page 7 of 9 4/10/03 SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M Carrier Tape Specifications MOC216-M MOC217-M 8.0 ± 0.10 3.50 ± 0.20 0.30 MAX 4.0 ± 0.10 2.0 ± 0.05 Ø1.5 MIN 1.75 ± 0.10 5.5 ± 0.05 8.3 ± 0.10 12.0 ± 0.3 5.20 ± 0.20 0.1 MAX 6.40 ± 0.20 Ø1.5 ± 0.1/-0 User Direction of Feed Reflow Profile 300 Temperature (°C) 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 245°C peak 230°C, 10–30 s Time above 183°C, 120–180 sec Ramp up = 2–10°C/sec • Peak reflow temperature: 245°C (package surface temperature) • Time of temperature higher than 183°C for 120–180 seconds • One time soldering reflow is recommended 3.5 4 4.5 3 Time (Minute) © 2002 Fairchild Semiconductor Corporation Page 8 of 9 4/10/03 SMALL OUTLINE SURFACE MOUNT PHOTOTRANSISTOR OPTOCOUPLERS MOC215-M MOC216-M MOC217-M DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. © 2002 Fairchild Semiconductor Corporation Page 9 of 9 4/10/03