MOC8107SR2M

CYN17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers May 2008 CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M, MOC8107M Phototransistor Optocouplers Features ■ UL recognized (File # E90700, Vol. 2) ■ VDE recognized Description The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package. ■ ■ ■ ■ – Add option V (e.g., CNY17F2VM) – File #102497 Current transfer ratio in select groups High BVCEO: 70V minimum (CNY17XM, CNY17FXM, MOC810XM) Closely matched current transfer ratio (CTR) minimizes unit-to-unit variation. Very low coupled capacitance along with no chip to pin 6 base connection for minimum noise susceptability (CNY17FXM, MOC810XM) Package Outlines Applications ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs ■ Appliance sensor systems ■ Industrial controls Schematics ANODE 1 6 NC ANODE 1 6 BASE CATHODE 2 5 COLLECTOR CATHODE 2 5 COLLECTOR NC 3 4 EMITTER NC 3 4 EMITTER CNY17F1M/2M/3M/4M MOC8106M/7M CNY171M/2M/3M/4M ©2006 Fairchild Semiconductor Corporation CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7 www.fairchildsemi.com CYN17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol TOTAL DEVICE TSTG TOPR TSOL PD EMITTER IF VR IF (pk) PD DETECTOR IC VCEO VECO PD Storage Temperature Operating Temperature Lead Solder Temperature Parameters Value -40 to +150 -40 to +100 260 for 10 sec 250 2.94 60 6 1.5 120 1.41 50 70 7 150 1.76 Units °C °C °C mW mW/°C mA V A mW mW/°C mA V V mW mW/°C Total Device Power Dissipation @ 25°C (LED plus detector) Derate Linearly From 25°C Continuous Forward Current Reverse Voltage Forward Current – Peak (1µs pulse, 300pps) LED Power Dissipation 25°C Ambient Derate Linearly From 25°C Continuous Collector Current Collector-Emitter Voltage Emitter Collector Voltage Detector Power Dissipation @ 25°C Derate Linearly from 25°C ©2006 Fairchild Semiconductor Corporation CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7 www.fairchildsemi.com 2 CYN17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers Electrical Characteristics (TA = 25°C Unless otherwise specified.)(1) Individual Component Characteristics Symbol Parameters Test Conditions EMITTER VF Input Forward Voltage IF = 60mA IF = 10mA CJ IR Capacitance Reverse Leakage Current Breakdown Voltage Collector to Emitter Collector to Base Emitter to Collector Leakage Current Collector to Emitter Collector to Base Capacitance Collector to Emitter Collector to Base Emitter to Base VF = 0 V, f = 1.0MHz VR = 6V CNY17XM, CNY17FXM MOC810XM All All 1.0 1.0 1.35 1.15 18 0.001 10 1.65 1.50 pF µA V Device Min. Typ. Max. Units DETECTOR BVCEO BVCBO BVECO ICEO ICBO CCE CCB CEB IC = 1.0mA, IF = 0 IC = 10µA, IF = 0 IE = 100µA, IF = 0 VCE = 10 V, IF = 0 VCB = 10 V, IF = 0 VCE = 0, f = 1MHz VCB = 0, f = 1MHz VEB = 0, f = 1MHz All CNY171M/2M/3M/4M All All CNY171M/2M/3M/4M All CNY171M/2M/3M/4M CNY171M/2M/3M/4M 8 20 10 70 70 7 100 120 10 1 50 20 nA nA pF pF pF V Isolation Characteristics Symbol VISO RISO CISO Characteristic Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance Test Conditions f = 60 Hz, t = 1 sec., II-O ≤ 2µA(4) VI-O = 500 VDC(4) VI-O = Ø, f = 1MHz(4) Min. 7500 1011 Typ.* Max. Units Vac(pk) Ω 0.2 pF Transfer Characteristics (TA = 25°C Unless otherwise specified.)(3) Symbol COUPLED (CTR)(2) Output Collector Current MOC8106M MOC8107M CNY17F1M CNY17F2M CNY17F3M CNY17F4M CNY171M CNY172M CNY173M CNY174M VCE(sat) Collector-Emitter CNY17XM/FXM Saturation Voltage MOC8106M/7M IC = 2.5mA, IF = 10mA IC = 500µA, IF = 5.0mA IF = 10mA, VCE = 5V IF = 10mA, VCE = 10V 50 150 % DC Characteristics Test Conditions Min. Typ.* Max. Units 100 40 63 100 160 40 63 100 160 300 80 125 200 320 80 125 200 320 0.4 V *All typicals at TA = 25°C ©2006 Fairchild Semiconductor Corporation CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7 www.fairchildsemi.com 3 CYN17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers Electrical Characteristics Symbol ton toff td tr ts tf (Continued) (TA = 25°C Unless otherwise specified.)(1) Transfer Characteristics (Continued)(3) AC Characteristics(4) Turn-On Time Turn-Off Time Delay Time Rise Time Storage Time Fall Time All Devices All Devices CNY17XM/XFM All Devices CNY17XM/FXM CNY17XM/FXM All Devices CNY17XM/FXM SATURATED SWITCHING TIMES ton Turn-on Time CNY171M/F1M CNY172M/3M/4M CNY17F2M/F3M/F4M tr Rise Time CNY171M/F1M CNY172M/3M/4M CNY17F2M/F3M/F4M td Delay Time CNY171M/F1M CNY172M/3M/4M CNY17F2M/F3M/F4M toff Turn-off Time CNY171M/F1M CNY172M/3M/4M CNY17F2M/F3M/F4M tf Fall Time CNY171M/F1M CNY172M/3M/4M CNY17F2M/F3M/F4M ts Storage Time CNY171M/F1M IF = 20mA, VCC = 5V, RL = 1kΩ IF = 10mA, VCC = 5V, RL = 1kΩ IF = 20mA, VCC = 5V, RL = 1kΩ IF = 10mA, VCC = 5V, RL = 1kΩ IF = 20mA, VCC = 5V, RL = 1kΩ IF = 10mA, VCC = 5V, RL = 1kΩ IF = 20mA, VCE = 0.4V IF = 10mA, VCE = 0.4V IF = 20mA, VCC = 5V, RL = 1kΩ IF = 10mA, VCC = 5V, RL = 1kΩ IF = 20mA, VCC = 5V, RL = 1kΩ 5.5 8.0 4.0 6.0 5.5 8.0 34 39 20.0 24.0 34.0 µs µs µs µs µs µs Test Conditions IC = 2.0mA, VCC = 10V, RL = 100Ω IC = 2.0mA, VCC = 10V, RL = 100Ω IF = 10mA, VCC = 5V, RL = 75Ω IC = 2.0mA, VCC = 10V, RL = 100Ω IF = 10mA, VCC = 5V, RL = 75Ω IF = 10mA, VCC = 5V, RL = 75Ω IC = 2.0mA, VCC = 10V, RL = 100Ω IF = 10mA, VCC = 5V, RL = 75Ω Min. Typ.* Max. Units 2 3 1 4.0 4.1 2 3.5 µs µs 10 10 5.6 µs µs µs µs NON-SATURATED SWITCHING TIME CNY172M/3M/4M IF = 10mA, VCC = 5V, RL = 1kΩ CNY17F2M/F3M/F4M *All typicals at TA = 25°C Notes: 39.0 1. 2. 3. 4. Always design to the specified minimum/maximum electrical limits (where applicable). Current Transfer Ratio (CTR) = IC/IF x 100%. For test circuit setup and waveforms, refer to Figures 10 and 11. For this test, Pins 1 and 2 are common, and Pins 4 are 5 are common. ©2006 Fairchild Semiconductor Corporation CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7 www.fairchildsemi.com 4 CYN17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers Typical Performance Characteristics Fig. 2 Normalized CTR vs. Ambient Temperature Fig. 1 Normalized CTR vs. Forward Current 1.6 VCE = 5.0V TA = 25˚C Normalized to IF = 10mA 1.2 IF = 5mA 1.2 1.0 1.0 1.4 1.4 NORMALIZED CTR NORMALIZED CTR IF = 10mA 0.8 0.8 0.6 0.6 IF = 20mA 0.4 0.4 Normalized to: IF = 10mA TA = 25˚C 0 2 4 6 8 10 12 14 16 18 20 0.2 -60 -40 -20 0 0.2 0.0 20 40 60 80 100 IF – FORWARD CURRENT (mA) TA – AMBIENT TEMPERATURE (˚C) Fig. 3 CTR vs. RBE (Unsaturated) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN)) 1.0 0.9 IF = 20mA 0.8 IF = 10mA 0.7 0.6 0.5 0.4 0.3 0.2 VCE = 5.0V 0.1 0.0 10 100 1000 IF = 5mA 1.0 0.9 0.8 Fig. 4 CTR vs. RBE (Saturated) VCE = 0.3V 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 10 100 1000 IF = 5mA IF = 10mA IF = 20mA RBE – BASE RESISTANCE (kΩ) RBE – BASE RESISTANCE (kΩ) Fig. 5 Switching Speed vs. Load Resistor 1000 IF = 10mA VCC = 10V TA = 25˚C Fig. 6 Normalized ton vs. RBE 5.0 NORMALIZED ton – (ton(RBE) / ton(open)) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 10 100 VCC = 10V IC = 2mA RL = 100Ω SWITCHING SPEED (µs) Tf Toff 10 Ton 1 Tr 100 1000 10000 100000 0.1 0.1 1 10 100 RBE – BASE RESISTANCE (kΩ) R – LOAD RESISTOR (kΩ) ©2006 Fairchild Semiconductor Corporation CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7 www.fairchildsemi.com 5 CYN17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers Typical Performance Characteristics (Continued) Fig. 8 LED Forward Voltage vs. Forward Current Fig. 7 Normalized toff vs. RBE 1.4 1.8 NORMALIZED toff – (toff(RBE) / toff(open)) 1.3 1.2 1.7 VF – FORWARD VOLTAGE (V) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 10 100 1000 10000 100000 VCC = 10V IC = 2mA RL = 100Ω 1.6 1.5 1.4 TA = -55°C 1.3 TA = 25°C 1.2 TA = 100°C 1.1 RBE – BASE RESISTANCE (k Ω) 1.0 1 10 100 IF – LED FORWARD CURRENT (mA) Fig. 9 Collector-Emitter Saturation Voltage vs Collector Current VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) 100 TA = 25˚C 10 1 IF = 2.5mA 0.1 0.01 IF = 5mA IF = 10mA IF = 20mA 0.001 0.01 0.1 1 10 IC - COLLECTOR CURRENT (mA) VCC INPUT PULSE 10% OUTPUT PULSE 90% IF INPUT IC RL OUTPUT (VCE) td tr ton ts tf toff Figure 10. Switching Time Test Circuit Figure 11. Switching Time Waveforms ©2006 Fairchild Semiconductor Corporation CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7 www.fairchildsemi.com 6 CYN17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers Package Dimensions Through Hole 0.350 (8.89) 0.320 (8.13) Pin 1 ID Surface Mount 0.350 (8.89) 0.320 (8.13) PIN 1 ID 0.260 (6.60) 0.240 (6.10) 0.260 (6.60) 0.240 (6.10) 0.390 (9.90) 0.332 (8.43) SEATING PLANE 0.070 (1.77) 0.040 (1.02) SEATING PLANE 0.014 (0.36) 0.010 (0.25) 0.320 (8.13) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.320 (8.13) 0.200 (5.08) 0.115 (2.93) 0.200 (5.08) 0.115 (2.93) 0.012 (0.30) 0.008 (0.20) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 15° 0.012 (0.30) 0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.035 (0.88) 0.006 (0.16) 0.4" Lead Spacing 0.350 (8.89) 0.320 (8.13) PIN 1 ID Recommended Pad Layout for Surface Mount Leadform 0.070 (1.78) 0.060 (1.52) 0.260 (6.60) 0.240 (6.10) 0.425 (10.79) 0.070 (1.77) 0.040 (1.02) SEATING PLANE 0.100 (2.54) 0.305 (7.75) 0.030 (0.76) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16) Note: All dimensions are in inches (millimeters) ©2006 Fairchild Semiconductor Corporation CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7 www.fairchildsemi.com 7 CYN17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers Ordering Information Option No option S SR2 T V TV SV SR2V Order Entry Identifier (Example) CYN171M CYN171SM CYN171SR2M CYN171TM CYN171VM CYN171TVM CYN171SVM CYN171SR2VM Description Standard Through Hole Device Surface Mount Lead Bend Surface Mount; Tape and Reel 0.4" Lead Spacing VDE 0884 VDE 0884, 0.4" Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape and Reel Marking Information 1 CYN17-1 V 3 4 2 6 X YY Q 5 Definitions 1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) One digit year code, e.g., ‘7’ Two digit work week ranging from ‘01’ to ‘53’ Assembly package code ©2006 Fairchild Semiconductor Corporation CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7 www.fairchildsemi.com 8 CYN17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers Carrier Tape Specification 12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 0.30 ± 0.05 4.0 ± 0.1 Ø1.5 MIN 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 24.0 ± 0.3 0.1 MAX 10.1 ± 0.20 Ø1.5 ± 0.1/-0 User Direction of Feed Reflow Profile 300 280 260 240 220 200 180 Time above 183°C = 90 Sec 260°C >245°C = 42 Sec °C 160 140 120 100 80 60 40 20 0 0 60 120 180 33 Sec 1.822°C/Sec Ramp up rate 270 360 Time (s) ©2006 Fairchild Semiconductor Corporation CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7 www.fairchildsemi.com 9 CYN17XM, CNY17FXM, MOC810XM — Phototransistor Optocouplers TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative / In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. First Production No Identification Needed Obsolete Full Production Not In Production ©2006 Fairchild Semiconductor Corporation CYN17XM, CNY17FXM, MOC810XM Rev. 1.0.7 www.fairchildsemi.com 10