MOCD217-M_05

DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS (LOW INPUT CURRENT) MOCD217-M DESCRIPTION The MOCD217-M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting. FEATURES • U.L. Recognized (File #E90700, Volume 2) • VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD217V-M) • Low Input Current (Specified @ 1 mA) • Minimum BVCEO of 30 Volts Guaranteed • Convenient Plastic SOIC-8 Surface Mountable Package Style • Standard SOIC-8 Footprint, with 0.050" Lead Spacing • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • High Input-Output Isolation of 2500 VAC(rms) Guaranteed ANODE 1 1 8 COLLECTOR 1 CATHODE 1 2 7 EMITTER 1 ANODE 2 3 6 COLLECTOR 2 APPLICATIONS • Interfacing and coupling systems of different potentials and impedances • General purpose switching circuits • Monitor and detection circuits CATHODE 2 4 5 EMITTER 2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise specified) Rating EMITTER Forward Current - Continuous Forward Current - Peak (PW = 100 µs, 120 pps) Reverse Voltage LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage Emitter-Collector Voltage Collector Current-Continuous Detector Power Dissipation @ TA = 25°C Derate above 25°C TOTAL DEVICE Input-Output Isolation Voltage(1,2,3) (f = 60 Hz, 1 min. Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range Storage Temperature Range Symbol IF IF (pk) VR PD Value 60 1.0 6.0 90 0.8 30 7.0 150 150 1.76 Unit mA A V mW mW/°C V V mA mW mW/°C VCEO VECO IC PD VISO PD TA Tstg 2500 250 2.94 -40 to +100 -40 to +125 Vac(rms) mW mW/°C °C °C © 2005 Fairchild Semiconductor Corporation Page 1 of 8 7/7/05 DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS (LOW INPUT CURRENT) MOCD217-M ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter EMITTER Input Forward Voltage Reverse Leakage Current Capacitance DETECTOR Collector-Emitter Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Capacitance COUPLED Output Collector Current(4) Collector-Emitter Saturation Voltage Turn-On Time Turn-Off Time Rise Time Fall Time Isolation Surge Voltage(1,2,3) Isolation Resistance(2) Isolation Capacitance(2) ** Typical values at TA = 25°C NOTE: 1. Input-Output Isolation Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common. 3. VISO rating of 2500 VAC(rms) for t = 1 min. is equivalent to a rating of 3,000 VAC(rms) for t = 1 sec. 4. Current Transfer Ratio (CTR) = IC/IF x 100%. IF = 1.0 mA, VCE = 5 V IC = 100 µA, IF = 1.0 mA IC = 2.0 mA, VCC = 10 V, RL = 100 Ω (fig 6.) IC = 2.0 mA, VCC = 10 V, RL = 100 Ω (fig 6.) IC = 2.0 mA, VCC = 10 V, RL = 100 Ω (fig 6.) IC = 2.0 mA, VCC = 10 V, RL = 100 Ω (fig 6.) f = 60 Hz, t = 1 min. VI-O = 500 V VI-O = 0 V, f = 1 MHz CTR VCE (sat) ton toff tr tf VISO RISO CISO 100 — — — — — 2500 1011 — 130 0.35 7.5 5.7 3.2 4.7 — — 0.2 — 0.4 — — — — — — — % V µs µs µs µs Vac(rms) Ω pF VCE = 10 V, TA = 25°C VCE = 10 V, TA = 100°C IC = 100 µA IE = 100 µA f = 1.0 MHz, VCE = 0 V ICEO1 ICEO2 BVCEO BVECO CCE — — 30 7.0 — 1.0 1.0 90 7.8 7.0 50 — — — — nA µA V V pF IF = 1.0 mA VR = 6.0 V VF IR C — — — 1.05 0.1 18 1.3 100 — V µA pF Test Conditions Symbol Min Typ** Max Unit © 2005 Fairchild Semiconductor Corporation Page 2 of 8 7/7/05 DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS (LOW INPUT CURRENT) MOCD217-M Fig. 1 LED Forward Voltage vs. Forward Current 1.8 10 Fig. 2 Output Curent vs. Input Current I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) 1.7 VF - FORWARD VOLTAGE (V) 1.6 1.5 1 VCE = 5V NORMALIZED TO IF = 10mA 1.4 TA = -55°C 1.3 TA = 25°C TA = 100°C 1.2 0.1 1.1 1.0 1 10 100 IF - LED FORWARD CURRENT (mA) 0 .01 0.1 1 10 100 Fig. 3 Output Current vs. Ambient Temperature 10 IF - LED INPUT CURRENT (mA) Fig. 4 Output Current vs. Collector - Emitter Voltage I C - OUTPUT COLLECTOR CURRENT (NORMALIZED) 1.6 I C - O UTPUT COLLECTOR CURRENT (NORMALIZED) 1.4 1.2 1.0 1 0.8 0.6 0.4 0.2 I F = 10mA NORMALIZED TO VCE = 5V 0.0 0 1 2 3 4 5 6 7 8 9 10 NORMALIZED TO TA = 25 o C 0.1 -80 -60 -40 -20 0 20 40 60 o 80 100 120 TA - AMBIENT TEMPERATURE ( C) VCE - COLLECTOR -EMITTER VOLTAGE (V) Fig. 5 Dark Current vs. Ambient Temperature 10000 I CEO - COLLECTOR -EMITTER DARK CURRENT (nA) 1000 VCE=10V 100 10 1 0.1 0 20 40 60 o 80 100 TA - AMBIENT TEMPERATURE ( C) © 2005 Fairchild Semiconductor Corporation Page 3 of 8 7/7/05 DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS (LOW INPUT CURRENT) MOCD217-M TEST CIRCUIT VCC = 10V INPUT PULSE WAVE FORMS IF INPUT IC RL 10% 90% tr Adjust IF to produce IC = 2 mA ton tf toff OUTPUT PULSE OUTPUT Figure 6. Switching Time Test Circuit and Waveforms © 2005 Fairchild Semiconductor Corporation Page 4 of 8 7/7/05 DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS (LOW INPUT CURRENT) MOCD217-M Package Dimensions (Surface Mount) PIN 1 ID. 8-Pin Small Outline 0.024 (0.61) 0.164 (4.16) 0.144 (3.66) SEATING PLANE 0.060 (1.52) 0.202 (5.13) 0.182 (4.63) 0.275 (6.99) 0.155 (3.94) 0.010 (0.25) 0.006 (0.16) 0.143 (3.63) 0.123 (3.13) 0.021 (0.53) 0.011 (0.28) 0.008 (0.20) 0.003 (0.08) 0.050 (1.27) TYP 0.244 (6.19) 0.224 (5.69) 0.050 (1.27) Lead Coplanarity : 0.004 (0.10) MAX © 2005 Fairchild Semiconductor Corporation Page 5 of 8 7/7/05 DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS (LOW INPUT CURRENT) MOCD217-M ORDERING INFORMATION Option V R1 R1V R2 R2V Order Entry Identifier V R1 R1V R2 R2V Description VDE 0884 Tape and reel (500 units per reel) VDE 0884, Tape and reel (500 units per reel) Tape and reel (2500 units per reel) VDE 0884, Tape and reel (2500 units per reel) MARKING INFORMATION 1 D217 V X YY S 2 6 3 4 5 Definitions 1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) One digit year code, e.g., ‘3’ Two digit work week ranging from ‘01’ to ‘53’ Assembly package code © 2005 Fairchild Semiconductor Corporation Page 6 of 8 7/7/05 DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS (LOW INPUT CURRENT) MOCD217-M Carrier Tape Specifications 8.0 ± 0.10 3.50 ± 0.20 0.30 MAX 4.0 ± 0.10 2.0 ± 0.05 Ø1.5 MIN 1.75 ± 0.10 5.5 ± 0.05 8.3 ± 0.10 12.0 ± 0.3 5.20 ± 0.20 0.1 MAX 6.40 ± 0.20 Ø1.5 ± 0.1/-0 User Direction of Feed Reflow Profile 300 280 260 240 220 200 180 Time above 183°C = 90 Sec 260°C >245°C = 42 Sec °C 160 140 120 100 80 60 40 20 0 0 60 120 180 33 Sec 1.822°C/Sec Ramp up rate 270 360 Time (s) © 2005 Fairchild Semiconductor Corporation Page 7 of 8 7/7/05 DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS (LOW INPUT CURRENT) MOCD217-M DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. © 2005 Fairchild Semiconductor Corporation Page 8 of 8 7/7/05