MPF102_04

MPF102 MPF102 N-Channel RF Amplifier • This device is designed for electronic switching applications such as low ON resistance analog switching. • Sourced from process 50. 1 TO-92 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * Ta=25°C unless otherwise noted Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Value 25 -25 10 - 55 ~ +155 Units V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics Ta=25°C unless otherwise noted Symbol Off Characteristics V(BR)GSS IGSS Vgs(off) Vgs IDSS gfs Ciss Crss Parameter Test Condition IG = -1.0µA, VDS = 0 VGS = -15V, VDS = 0 VDS = 15V, ID = 2nA VDS = 15V, ID = 200µA VDS = 15V, VGS = 0 VGS = 0V, VDS = 15V, f = 1kHz VGS = 0, VDS = 15V, f = 1MHz VGS = 0, VDS = 15V, f = 1MHz -0.5 2.0 2000 Min. -25 -2.0 -8.0 -7.5 20 7500 7.0 3.0 Max. Units V nA V V mA µS pF pF Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Gate-Source Voltage Zero-Gate Voltage Drain Current Forward Transconductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance On Characteristics * Small Signal Characteristics Thermal Characteristics Ta=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 350 2.8 125 357 Units mW mW/°C °C/W °C/W ©2004 Fairchild Semiconductor Corporation Rev. B, October 2004 MPF102 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. 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Around the world.™ The Power Franchise® Programmable Active Droop™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2004 Fairchild Semiconductor Corporation Rev. I13