MPS5179

MPS5179 / MMBT5179 / PN5179 Discrete POWER & Signal Technologies MPS5179 MMBT5179 C PN5179 E C B TO-92 E SOT-23 Mark: 3C B C E TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 µA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 12 20 2.5 50 -55 to +150 Units V V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max PN/MPS5179 350 2.8 357 *MMBT5179 225 1.8 556 Units mW mW/°C °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." © 1997 Fairchild Semiconductor Corporation 5179, Rev B MPS5179 / MMBT5179 / PN5179 NPN RF Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS VCEO(sus) V(BR)CBO V(BR)EBO ICBO Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 3.0 mA, IB = 0 IC = 1.0 µ A, IE = 0 IE = 10 µ A, IC = 0 VCB = 15 V, IE = 0 VCB = 15 V, TA = 150°C 12 20 2.5 0.02 1.0 V V V µA µA ON CHARACTERISTICS hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 3.0 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 10 mA, IB = 1.0 mA 25 250 0.4 1.0 V V SMALL SIGNAL CHARACTERISTICS fT Ccb hfe rb’Cc NF Current Gain - Bandwidth Product Collector-Base Capacitance Small-Signal Current Gain Collector Base Time Constant Noise Figure IC = 5.0 mA, VCE = 6.0 V, f = 100 MHz VCB = 10 V, IE = 0, f = 0.1 to 1.0 MHz IC = 2.0 mA, VCE = 6.0 V, f = 1.0 kHz IC = 2.0 mA, VCB = 6.0 V, f = 31.9 MHz IC = 1.5 mA, VCE = 6.0 V, RS = 50Ω, f = 200 MHz 900 2000 1.0 25 3.0 300 14 5.0 ps dB MHz pF FUNCTIONAL TEST Gpe PO Amplifier Power Gain Power Output VCE = 6.0 V, IC = 5.0 mA, f = 200 MHz VCB = 10 V, IE = 12 mA, f ≥ 500 MHz 15 20 dB mW *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Spice Model NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=282.1 Ne=1.177 Ise=69.28E-18 Ikf=22.03m Xtb=1.5 Br=1.176 Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.588n Tf=135.6p Itf=.27 Vtf=10 Xtf=30 Rb=10) MPS5179 / MMBT5179 / PN5179 NPN RF Transistor (continued) DC Typical Characteristics VCESAT- COLLECTOR-EMITTER VOLTAGE (V) DC Current Gain vs Collector Current 250 h FE - DC CURRENT GAIN 125 °C Collector-Emitter Saturation Voltage vs Collector Current 0.2 β = 10 200 150 100 - 40 ºC 0.15 125 °C 25 °C 0.1 25 °C 50 0 0.001 V CE = 5V 0.01 I C - COLLECTOR CURRENT (A) 0.1 0.05 - 40 ºC 0.1 1 10 I C - COLLECTOR CURRENT (mA) P 40 20 30 V BE(ON) BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1.2 1 - 40 ºC Base-Emitter ON Voltage vs Collector Current 1 0.8 - 40 ºC 25 °C 0.8 0.6 0.4 0.1 IC 25 °C 125 °C 0.6 125 °C β = 10 0.4 V CE = 5V 0.1 1 10 I C - COLLECTOR CURRENT (mA) 50 1 10 - COLLECTOR CURRENT (mA) 20 30 0.2 0.01 Collector-Cutoff Current vs Ambient Temperature I CBO- COLLECTOR CURRENT (nA) 100 V 10 CB = 20V 1 0.1 25 50 75 100 125 T A - AMBIENT TEMPERATURE (ºC) 150 MPS5179 / MMBT5179 / PN5179 NPN RF Transistor (continued) AC Typical Characteristics POWER DISSIPATION vs AMBIENT TEMPERATURE PD - POWER DISSIPATION (mW) 350 300 250 SOT-23 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( ° C) 125 150 TO-92 Test Circuit 50 pF (NOTE 2) 175 pF 500 mHz Output into 50Ω RFC (NOTE 1) NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long 1000 pF 1000 pF 2.2 KΩ RFC - VCC VCC FIGURE 1: 500 MHz Oscillator Circuit