MPSA63

MPSA63 / MMBTA63 / PZTA63 Discrete POWER & Signal Technologies MPSA63 MMBTA63 C PZTA63 C E C B E C B TO-92 E SOT-23 Mark: 2U B SOT-223 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings* Symbol VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 30 30 10 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSA63 625 5.0 83.3 200 Max *MMBTA63 350 2.8 357 **PZTA63 1,000 8.0 125 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." **Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. © 1997 Fairchild Semiconductor Corporation A63, Rev A MPSA63 / MMBTA63 / PZTA63 PNP Darlington Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CES ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 100 µ A, IB = 0 VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 30 100 100 V nA nA ON CHARACTERISTICS* hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V IC = 100 mA, VCE = 5.0 V IC = 100 mA, IB = 0.1 mA IC = 100 mA, VCE = 5.0 V 5,000 10,000 1.5 2.0 V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 5.0 V, f = 100 MHz 125 MHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%