0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MPSW01

MPSW01

  • 厂商:

    FAIRCHILD(仙童半导体)

  • 封装:

  • 描述:

    MPSW01 - NPN General Purpose Amplifier - Fairchild Semiconductor

  • 数据手册
  • 价格&库存
MPSW01 数据手册
MPSW01 NPN General Purpose Amplifier MPSW01 NPN General Purpose Amplifier Features • This device is designed for general purpose medium power amplifiers • Sourced from process 37 Absolute Maximum Ratings * Symbol VCEO VCBO VEBO IC PD TJ , TSTG Note : Ta = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation Derate about 25°C Operating Junction and Storage Temperature Range Value 30 40 5.0 1.0 1.0 8.0 -55 to +150 Units V V V A W mW/°C °C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. 1) These ratings are based on a maximum junction temperature 150 ‘C 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case* Thermal Resistance, Junction to Ambien* 6cm2 Value 50 125 Units °C/W °C/W * Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com MPSW01 Rev. A MPSW01 NPN General Purpose Amplifier Electrical Characteristics (Note) T Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO a = 25°C unless otherwise noted Parameter Test Condition MIN MAX Units Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 10 mA, IB = 0 IC = 100 uA, IE = 0 IE = 100 uA, IC = 0 VCB = 30 V, IE = 0 VEB = 3.0 V, IC = 0 30 40 5.0 0.1 0.1 V V V uA uA On Characteristics hFE DC Current Gain IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 1.0 A, VCE = 1.0 V 55 60 50 0.5 1.2 V V VCE(sat) VBE(on) Collector-Emitter Saturation Voltage * IC = 1.0A, IB = 100 mA Emitter-Base On Voltage * IC = 1.0A, VCE = 1.0 V Small Signal Characteristics fT Ccb Note : 1) These ratings are based on a maximum junction temperature 150 ‘C 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations 3) Pulse Test: Pulse Width≤300µs, Duty Cycle≤1.0% Small-Signal Current Gain Collector-Base Capacitance IC = 50 mA, VCE = 10 V, f = 20 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 50 20 MHz pF * Typical Characteristics 2 MPSW01 Rev. A www.fairchildsemi.com MPSW01 NPN General Purpose Amplifier Typical Characteristics (continued) 3 MPSW01 Rev. A www.fairchildsemi.com MPSW01 NPN General Purpose Amplifier Typical Characteristics (continued) 4 MPSW01 Rev. A www.fairchildsemi.com MPSW01 NPN General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 Preliminary No Identification Needed Full Production Obsolete Not In Production 5 MPSW01 Rev. A www.fairchildsemi.com
MPSW01 价格&库存

很抱歉,暂时无法提供与“MPSW01”相匹配的价格&库存,您可以联系我们找货

免费人工找货