MTP3055VL

M TP3055VL June 2000 DISTRIBUTION GROUP* MTP3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies). Features • 12 A, 60 V. RDS(ON) = 0.18 Ω @ VGS = 5 V • Critical DC electrical parameters specified at elevated temperature. • Low drive requirements allowing operation directly from logic drivers. Vgs(th) < 2 V. • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. • 175°C maximum junction temperature rating. D G D TO-220 S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Gate-Source Voltage Drain Current - Continuous - Pulsed Drain-Source Voltage TC = 25°C unless otherwise noted Parameter Ratings 60 ±15 12 42 48 0.32 -65 to +175 Units V V A W W/°C °C °C/W °C/W Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Characteristics Rθ JC Rθ JA Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient (Note 1) 3.13 62.5 Package Outlines and Ordering Information Device Marking MTP3055VL Device MTP3055VL Package Information Rails/Tubes Quantity 45 units * Die and manufacturing source subject to change without prior notification. 1999 Fairchild Semiconductor Corporation MTP3055VL Rev. A1 M TP3055VL Electrical Characteristics S y mbol w DSS IAR T C = 2 5°C unless otherwise noted Parameter Test Conditions ( Note 2) Min Typ Max 72 12 Units mJ A DRAIN-SOURCE AVALANCHE RATINGS Single Pulse Drain-Source V DD = 2 5 V, ID = 1 2 A Avalanche Energy Maximum Drain-Source Avalanche Current V GS = 0 V , ID = 2 50 µA ID = 2 50 µA, Referenced to 25 ° C V DS = 6 0 V, V GS = 0 V V DS = 6 0 V, V GS = 0 V , T J = 150 ° C V GS = 1 5 V, V DS = 0 V V GS = -15 V, V DS = 0 V Off Characteristics BV DSS ∆ BV DSS ∆TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current 60 55 10 100 100 -100 V mV/° C µA IGSSF IGSSR Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse ( Note 2) nA nA On Characteristics V GS(th) ∆ V GS(th) ∆TJ R DS(on) V DS(on) g FS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Drain-Source On-Voltage On-Resistance Forward Transconductance V DS = V GS , ID = 2 50 µA ID = 2 50 µA, Referenced to 25 ° C V GS = 5 V ,ID = 6 A , V GS = 5 V ,ID = 1 2 A V DS = 8 V , ID = 6 A 1 1.6 -4 0.100 2 V mV/° C 0.180 2.6 Ω V S 5 8.7 Dynamic Characteristics C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance ( Note 2) V DS = 2 5 V, V GS = 0 V , f = 1.0 MHz 345 110 30 570 160 40 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Q gs Q gd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 3 0 V, ID = 1 2 A, V GS = 5 V , R GEN = 9 .1 Ω 20 190 30 90 ns ns ns ns nC nC nC V DS = 4 8 V, ID = 1 2 A, V GS = 5 V 7.8 1.7 3.2 10 Drain-Source Diode Characteristics and Maximum Ratings IS ISM V SD trr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Drain-Source Reverse Recovery Time V GS = 0 V , IS = 1 2 A IF = 12 A, di/dt = 100A/µs ( Note 2) ( Note 2) ( Note 2) 12 42 1.3 55 A A V nS Notes: 1. RθJA is the sum of the juntion-to-case and case-to-ambient thermal resistance. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% MTP3055VL Rev. A1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. Around the world.™ OPTOPLANAR™ PACMAN™ The Power Franchise POP™ Programmable Active Droop™ Power247™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11