NDB4060L

April 1996 NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 15A, 60V. RDS(ON) = 0.1Ω @ VGS = 5V Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherwise noted NDP4060L 60 60 ± 16 ± 25 15 45 50 0.33 -65 to 175 275 NDB4060L Units V V V Drain-Gate Voltage (RGS < 1 MΩ) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) Drain Current - Continuous - Pulsed A PD Total Power Dissipation @ TC = 25°C Derate above 25°C W W/°C °C °C TJ,TSTG TL Operating and Storage Temperature Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds © 1997 Fairchild Semiconductor Corporation NDP4060L Rev. B / NDB4060L Rev. C Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 25 V, ID = 15 A 40 15 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 60 V, VGS = 0 V TJ =125°C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 16 V, VDS = 0 V VGS = -16 V, VDS= 0 V VDS = VGS, ID = 250 µA TJ =125°C Static Drain-Source On-Resistance VGS = 5 V, ID = 7.5 A TJ =125°C VGS = 10 V, ID = 15 A ID(on) gFS On-State Drain Current Forward Transconductance VGS = 5 V, VDS = 10 V VDS = 10 V, ID = 7.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz 15 3 8 1 0.65 1.5 1.1 0.085 0.14 0.07 60 250 1 100 -100 V µA mA nA nA ON CHARACTERISTICS (Note 1) Gate Threshold Voltage 2 1.5 0.1 0.16 0.08 A S V Ω DYNAMIC CHARACTERISTICS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance 510 170 50 600 200 100 pF pF pF SWITCHING CHARACTERISTICS (Note 1) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 48 V, ID = 15 A, VGS = 5 V VDD = 30 V, ID = 15 A, VGS = 5 V, RGEN = 51 Ω, RGS = 51 Ω 9 151 35 61 11 2 6.1 20 250 100 150 17 nS nS nS nS nC nC nC NDP4060L Rev. B / NDB4060L Rev. C Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS IS ISM VSD Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.5 A (Note 1) TJ = 125°C trr Irr Reverse Recovery Time Reverse Recovery Current VGS = 0 V, I F = 15 A, dI F /dt = 100 A/µs 0.95 0.88 51 3.6 15 45 1.3 1.2 100 7 ns A A A V THERMAL CHARACTERISTICS RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 62.5 °C/W °C/W Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. NDP4060L Rev. B / NDB4060L Rev. C Typical Electrical Characteristics 30 2 V GS = 1 0V ID , DRAIN-SOURCE CURRENT (A) 5 .0 4 .5 4 .0 3 .5 3 .0 2 .5 0 R DS(on) NORMALIZED , 20 DRAIN-SOURCE ON-RESISTANCE 25 6 .0 1.8 1.6 1.4 V GS = 3 .0V 3.5 4.0 4 .5 5 .0 15 1.2 10 6 .0 1 0.8 0.6 5 10 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5 0 5 10 15 20 I D , DRAIN CURRENT (A) 25 30 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 2.2 2 DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 TJ , JUNCTION TEMPERATURE (°C) 150 175 R DS(on), NORMALIZED 2.5 I D = 7.5A DRAIN-SOURCE ON-RESISTANCE V GS = 5 V 2 VGS = 5V R DS(ON), NORMALIZED TJ = 125°C 1.5 2 5°C 1 - 55°C 0.5 0 5 10 15 20 ID , DRAIN CURRENT (A) 25 30 Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Drain Current and Temperature 20 1.2 125°C GATE-SOURCE THRESHOLD VOLTAGE V DS = 10V 16 I D , DRAIN CURRENT (A) T = -55°C J 25°C VDS = V GS 1.1 I D = 250µA V th, NORMALIZED 1 12 0.9 8 0.8 4 0.7 0 1 2 V GS 3 4 5 , GATE TO SOURCE VOLTAGE (V) 6 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature NDP4060L Rev. B / NDB4060L Rev. C Typical Electrical Characteristics (continued) 1.15 DRAIN-SOURCE BREAKDOWN VOLTAGE 1.125 1.1 1.075 1.05 1.025 1 0.975 0.95 0.925 0.9 -50 -25 0 TJ 25 50 75 100 125 , JUNCTION TEMPERATURE (°C) 150 175 20 I D = 250µA I , REVERSE DRAIN CURRENT (A) 10 5 V GS = 0 V BV DSS , NORMALIZED 1 0.5 T J = 125°C 25°C - 55°C 0.1 0.01 S 0.001 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 7. Breakdown Voltage Variation with Temperature Figure 8. Body Diode Forward Voltage Variation with Current and Temperature 1500 1000 10 I D = 7.5A C i ss VGS , GATE-SOURCE VOLTAGE (V) 8 V DS = 12V 48V 500 CAPACITANCE (pF) 24V 6 200 C o ss 100 4 50 f = 1 MHz V GS = 0V C r ss 2 20 0.1 0 0.2 V 0.5 DS 1 2 5 10 , DRAIN TO SOURCE VOLTAGE (V) 20 50 0 4 8 12 16 20 Q g , GATE CHARGE (nC) Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics V DD t d(on) VIN D t on tr 90% to f f t d(off) 90% tf RL VOUT DUT VGEN VO U T 10% 10% INVERTED R GEN R GS G 90% S V IN 10% 50% 50% P ULSE W IDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms NDP4060L Rev. B / NDB4060L Rev. C Typical Electrical Characteristics (continued) 12 70 V DS = 10V , TRANSCONDUCTANCE (SIEMENS) 10 TJ = -55°C 2 5°C ID , DRAIN CURRENT (A) 50 O S( LIM N) IT 10 0u s 20 10 5 RD 1m 10 50 ms 8 s 1 25°C 6 ms 4 V GS = 1 0V SINGLE PULSE R θJC = 3 C/W 1 0.5 o DC 2 g FS T C = 25°C 0 0 4 8 12 I D , DRAIN CURRENT (A) 16 20 1 2 5 10 30 V DS , D RAIN-SOURCE VOLTAGE (V) 50 70 Figure 13. Transconductance Variation with Drain Current and Temperature Figure 14. Maximum Safe Operating Area 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0 .2 D = 0 .5 r(t), NORMALIZED EFFECTIVE 0.2 0 .1 R θJC ( t) = r(t) * RθJC R JC = 3.0 °C/W θ 0.1 0 .05 P(pk) 0.05 0.03 0.02 0.01 0.00001 0 .02 0 .01 S ingle Pulse t1 t2 TJ - T C = P * R θ JC (t) D uty Cycle, D = t1 /t2 0.0005 0.001 0.005 t 1 ,TIME 0.01 0.05 0.1 0.5 1 0.00005 0.0001 Figure 15. Transient Thermal Response Curve NDP4060L Rev. B / NDB4060L Rev. C